SIR818DP-T1-GE3
Product Category:
The SIR818DP-T1-GE3 belongs to the category of power MOSFETs.
Basic Information Overview:
- Category: Power MOSFET
- Use: It is used for power management applications in various electronic devices.
- Characteristics: High efficiency, low on-resistance, and fast switching speed.
- Package: DPAK (TO-252) package.
- Essence: The essence of SIR818DP-T1-GE3 lies in its ability to efficiently manage power in electronic circuits.
- Packaging/Quantity: Available in reels with a quantity of 2500 units per reel.
Specifications:
- Voltage Rating: 100V
- Continuous Drain Current: 54A
- RDS(ON): 4.5mΩ
- Gate Charge: 45nC
Detailed Pin Configuration:
The SIR818DP-T1-GE3 features a standard DPAK (TO-252) package with three pins: Gate, Drain, and Source.
Functional Features:
- High efficiency in power management
- Low on-resistance for reduced power loss
- Fast switching speed for improved performance
Advantages and Disadvantages:
- Advantages: High efficiency, low on-resistance, and fast switching speed make it suitable for high-performance applications.
- Disadvantages: May require careful thermal management at high currents.
Working Principles:
The SIR818DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control power flow in electronic circuits.
Detailed Application Field Plans:
- Power supplies
- Motor control
- LED lighting
- Battery management systems
Detailed and Complete Alternative Models:
- SiHP065N60E
- IPP60R190E6
This comprehensive entry provides an in-depth understanding of the SIR818DP-T1-GE3 power MOSFET, covering its basic information, specifications, functional features, advantages, working principles, application field plans, and alternative models.
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What is SIR818DP-T1-GE3?
- SIR818DP-T1-GE3 is a high-speed, low-loss, and low-capacitance rectifier diode designed for use in high-frequency applications such as power supplies, converters, and inverters.
What are the key features of SIR818DP-T1-GE3?
- The key features include low forward voltage drop, fast reverse recovery time, high surge current capability, and a small form factor package for space-constrained designs.
In what technical solutions can SIR818DP-T1-GE3 be used?
- SIR818DP-T1-GE3 can be used in various technical solutions including DC-DC converters, AC-DC power supplies, motor drives, and solar inverters.
What is the maximum operating temperature for SIR818DP-T1-GE3?
- The maximum operating temperature for SIR818DP-T1-GE3 is typically 175°C, making it suitable for demanding industrial and automotive applications.
Does SIR818DP-T1-GE3 have any certifications or compliances?
- Yes, SIR818DP-T1-GE3 is compliant with RoHS (Restriction of Hazardous Substances) and is designed to meet industry standards for reliability and performance.
What is the typical reverse recovery time of SIR818DP-T1-GE3?
- The typical reverse recovery time of SIR818DP-T1-GE3 is in the range of nanoseconds, enabling efficient switching in high-frequency applications.
Can SIR818DP-T1-GE3 be used in automotive electronics?
- Yes, SIR818DP-T1-GE3 is suitable for automotive electronics due to its high-temperature operation and robustness against electrical and thermal stress.
What are the recommended mounting and soldering techniques for SIR818DP-T1-GE3?
- The recommended mounting technique is through-hole mounting, and the recommended soldering technique is reflow soldering using lead-free solder.
Does SIR818DP-T1-GE3 require any external heat sinking?
- In most applications, SIR818DP-T1-GE3 does not require external heat sinking due to its low forward voltage drop and efficient thermal design.
Are there any application notes or reference designs available for SIR818DP-T1-GE3?
- Yes, application notes and reference designs are available from the manufacturer to assist engineers in implementing SIR818DP-T1-GE3 in their technical solutions.