AS4C1M16S-6TIN

Product Overview

Category

AS4C1M16S-6TIN belongs to the category of semiconductor memory products.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation
• Low power consumption
• Compact size
• Reliable performance

Package

AS4C1M16S-6TIN is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of AS4C1M16S-6TIN lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

AS4C1M16S-6TIN is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Part Number: AS4C1M16S-6TIN
• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 1M words x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: 6 (operating frequency of 166 MHz)
• Interface: Parallel
• Pin Count: 48 pins
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of AS4C1M16S-6TIN is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS
38. /CK
39. /CKE
40. /LDQM
41. /UDQM
42. VSS
43. VSS
44. VSS
45. VDD
46. VDD
47. VDD
48. NC

Functional Features

• Synchronous operation with the system clock
• Burst mode for efficient data transfer
• Auto-refresh and self-refresh modes for power saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization

Advantages and Disadvantages

Advantages

• High-speed operation allows for faster data access
• Low power consumption helps prolong battery life in portable devices
• Compact size enables integration into space-constrained designs
• Reliable performance ensures data integrity and system stability

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit of storage compared to alternative memory options

Working Principles

AS4C1M16S-6TIN operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The stored information is accessed by applying appropriate signals to the address and control pins of the device, allowing for read or write operations.

Detailed Application Field Plans

AS4C1M16S-6TIN finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models to AS4C1M16S-6TIN include: - AS4C1M16S-7TIN: Similar specifications but with a higher speed grade (operating frequency of 200 MHz) - AS4C1M16S-8TIN: Similar specifications but with an even higher speed grade (operating frequency of 233 MHz) - AS4C1M16S-6TCN: Similar specifications but with a different package type (TSOP instead of SOIC)

These alternative models provide options for different performance requirements and form factors.

In conclusion, AS4C1M16S-6TIN is a high-speed synchronous DRAM that offers reliable performance and low power