Alliance Memory, Inc.
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AS4C64M16MD1-6BINTR
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AS4C64M16MD1-6BINTR

Product Overview

Category: Integrated Circuit (IC)

Use: Memory module

Characteristics: - High-density memory module - Low power consumption - Fast data transfer rate - Reliable performance

Package: BGA (Ball Grid Array)

Essence: The AS4C64M16MD1-6BINTR is a high-density memory module designed for various electronic devices. It provides fast and reliable data storage capabilities with low power consumption.

Packaging/Quantity: The AS4C64M16MD1-6BINTR is typically packaged in trays or reels, and the quantity per package can vary depending on the manufacturer's specifications.

Specifications

  • Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
  • Density: 64 Megabits (Mb)
  • Organization: 16 Megabytes (MB) x 16 bits
  • Speed: 6 nanoseconds (ns)
  • Voltage: 3.3 volts (V)
  • Interface: Parallel
  • Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The AS4C64M16MD1-6BINTR has a specific pin configuration that allows it to be properly connected to a circuit board. The detailed pin configuration is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. VSS
  19. WE#
  20. CAS#
  21. RAS#
  22. CS#
  23. CKE
  24. A0
  25. A1
  26. A2
  27. A3
  28. A4
  29. A5
  30. A6
  31. A7
  32. A8
  33. A9
  34. A10
  35. A11
  36. A12
  37. A13
  38. A14
  39. A15
  40. BA0
  41. BA1
  42. CLK

Functional Features

  • High-speed data transfer
  • Burst mode operation
  • Auto-refresh and self-refresh modes
  • On-die termination (ODT) for improved signal integrity
  • Low power standby mode

Advantages and Disadvantages

Advantages: - High-density memory capacity - Fast data transfer rate - Low power consumption - Reliable performance - On-die termination for improved signal integrity

Disadvantages: - Limited compatibility with older systems that do not support the specified voltage and interface requirements

Working Principles

The AS4C64M16MD1-6BINTR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores and retrieves data in a synchronized manner, allowing for high-speed data transfer. The memory module communicates with the system through the specified interface, enabling seamless integration into various electronic devices.

Detailed Application Field Plans

The AS4C64M16MD1-6BINTR is widely used in applications that require high-density memory storage and fast data access. Some of the common application fields include:

  1. Computer systems
  2. Networking equipment
  3. Telecommunications devices
  4. Industrial control systems
  5. Consumer electronics

Detailed and Complete Alternative Models

  1. AS4C64M16MD1-6BCTR
  2. AS4C64M16MD1-6BCNTR
  3. AS4C64M16MD1-6BCINTR
  4. AS4C64M16MD1-6BIN
  5. AS4C64M16MD1-6BINTR2

These alternative models offer similar specifications and functionality to the AS4C64M16MD1-6BINTR, providing options for different application requirements.

In conclusion, the AS4C64M16MD1-6BINTR is a high-density memory module with fast data transfer capabilities and low power consumption. Its reliable performance and compatibility with various electronic devices make it a popular choice in computer systems, networking equipment, telecommunications devices, industrial control systems, and consumer electronics.

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi AS4C64M16MD1-6BINTR dalam penyelesaian teknikal

Sure! Here are 10 common questions and answers related to the application of AS4C64M16MD1-6BINTR in technical solutions:

Q1: What is AS4C64M16MD1-6BINTR? A1: AS4C64M16MD1-6BINTR is a specific type of memory chip, commonly known as a DDR SDRAM, which has a capacity of 64 megabits (Mb) and operates at a speed of 166 MHz.

Q2: What are the typical applications of AS4C64M16MD1-6BINTR? A2: AS4C64M16MD1-6BINTR is commonly used in various electronic devices such as computers, servers, networking equipment, and embedded systems where high-speed and high-capacity memory is required.

Q3: What is the voltage requirement for AS4C64M16MD1-6BINTR? A3: AS4C64M16MD1-6BINTR operates at a standard voltage of 3.3 volts (V).

Q4: Can AS4C64M16MD1-6BINTR be used as a replacement for other memory chips? A4: Yes, AS4C64M16MD1-6BINTR can be used as a replacement for similar DDR SDRAM chips with compatible specifications and pin configurations.

Q5: What is the data transfer rate of AS4C64M16MD1-6BINTR? A5: AS4C64M16MD1-6BINTR has a maximum data transfer rate of 333 million transfers per second (MT/s).

Q6: Does AS4C64M16MD1-6BINTR support error correction? A6: No, AS4C64M16MD1-6BINTR does not support error correction. It is a non-ECC (Error-Correcting Code) memory chip.

Q7: Can AS4C64M16MD1-6BINTR be used in both single and dual-channel memory configurations? A7: Yes, AS4C64M16MD1-6BINTR can be used in both single-channel and dual-channel memory configurations, depending on the specific requirements of the system.

Q8: What is the operating temperature range for AS4C64M16MD1-6BINTR? A8: AS4C64M16MD1-6BINTR has an operating temperature range of -40°C to +85°C.

Q9: Does AS4C64M16MD1-6BINTR require any special cooling or heat dissipation mechanisms? A9: AS4C64M16MD1-6BINTR does not have any specific cooling requirements. However, it is always recommended to follow good thermal management practices to ensure optimal performance and reliability.

Q10: Is AS4C64M16MD1-6BINTR compatible with different memory controllers? A10: Yes, AS4C64M16MD1-6BINTR is designed to be compatible with various memory controllers that support DDR SDRAM technology. However, it is important to verify compatibility with the specific memory controller being used in the system.

Please note that these answers are general and may vary based on the specific implementation and requirements of the technical solution.