BLF2425M8LS140U

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of Radio Frequency Signals - Characteristics: High Power, High Frequency, Low Distortion - Package: Surface Mount - Essence: Power Amplification - Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications: - Frequency Range: 2400-2500 MHz - Output Power: 25W - Gain: 14dB - Efficiency: 55% - Voltage: 32V - Current: 8A - Operating Temperature: -40°C to +150°C

Detailed Pin Configuration: - Pin 1: RF Input - Pin 2: Ground - Pin 3: RF Output - Pin 4: VCC

Functional Features: - High Power Gain - High Efficiency - Broadband Operation - Thermally Enhanced Package

Advantages: - High Power Output - Wide Operating Temperature Range - Suitable for Broadband Applications

Disadvantages: - Sensitive to Voltage Fluctuations - Requires Adequate Heat Dissipation

Working Principles: The BLF2425M8LS140U operates on the principle of amplifying radio frequency signals using a combination of high power gain and efficiency. It utilizes advanced semiconductor technology to achieve high performance in demanding RF applications.

Detailed Application Field Plans: - Wireless Communication Systems - Radar Systems - Satellite Communication - Industrial, Scientific, and Medical (ISM) Equipment

Detailed and Complete Alternative Models: - BLF2425M6LS250U - BLF2425M4LS200U - BLF2425M10LS180U

This product belongs to the category of RF power transistors and is primarily used for amplifying radio frequency signals. Its characteristics include high power, high frequency, and low distortion, packaged in a surface mount format. The essence of this product lies in its power amplification capabilities, and it is typically supplied in tape and reel packaging with 800 units per reel. With a frequency range of 2400-2500 MHz, output power of 25W, and gain of 14dB, the BLF2425M8LS140U offers high performance in RF amplification. Its detailed pin configuration includes RF input, ground, RF output, and VCC pins. The functional features of this transistor include high power gain, high efficiency, broadband operation, and a thermally enhanced package. While it provides advantages such as high power output and wide operating temperature range, it is sensitive to voltage fluctuations and requires adequate heat dissipation. The working principles of the BLF2425M8LS140U involve the amplification of radio frequency signals through advanced semiconductor technology. Its application field plans encompass wireless communication systems, radar systems, satellite communication, and industrial, scientific, and medical (ISM) equipment. Additionally, alternative models such as BLF2425M6LS250U, BLF2425M4LS200U, and BLF2425M10LS180U offer similar functionality and can be considered as substitutes for this product.