CGHV96100F2

Introduction

The CGHV96100F2 is a high-power, gallium nitride (GaN) High Electron Mobility Transistor (HEMT) belonging to the category of power amplifiers. This device is designed for use in applications requiring high-frequency, high-power performance. The following entry provides an overview of the basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models of the CGHV96100F2.

Basic Information Overview

• Category: Power Amplifiers
• Use: High-frequency, high-power applications
• Characteristics: High-power performance, GaN HEMT technology
• Package: Ceramic package
• Essence: Gallium nitride-based high-power amplifier
• Packaging/Quantity: Typically packaged individually

Specifications

• Frequency Range: 5.7 GHz - 6.4 GHz
• Output Power: 100 Watts
• Voltage: 50 Volts
• Gain: 14 dB
• Efficiency: 55%
• Thermal Resistance: 0.9 °C/W

Detailed Pin Configuration

The CGHV96100F2 features a standard pin configuration with input, output, and bias connections. The detailed pin configuration is as follows: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source - Pin 4: RF Ground - Pin 5: Bias

Functional Features

• High-power density
• Broadband performance
• High efficiency
• High gain
• Low thermal resistance

Advantages and Disadvantages

Advantages

• High power output
• Wide frequency range
• High efficiency
• Compact size
• Enhanced thermal management

Disadvantages

• Higher cost compared to traditional transistors
• Sensitive to voltage spikes

Working Principles

The CGHV96100F2 operates based on the principles of GaN HEMT technology, utilizing the unique properties of gallium nitride to achieve high-power amplification at microwave frequencies. When biased and driven with appropriate RF signals, the device amplifies the input signal with high efficiency and low distortion.

Detailed Application Field Plans

The CGHV96100F2 is ideally suited for various high-frequency applications, including: - Radar systems - Satellite communication - Point-to-point communication - Electronic warfare systems - Test and measurement equipment

Detailed and Complete Alternative Models

• CGHV96100P
• CGHV96100F
• CGHV96100E
• CGHV96100D

In conclusion, the CGHV96100F2 is a high-power GaN H-EMT designed for demanding high-frequency applications, offering high efficiency, compact size, and excellent thermal management. Its wide frequency range and high power output make it suitable for diverse applications in the fields of radar, communication, and electronic warfare.

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