S29GL064N11FFIV22

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Reliable and durable
• Package: Integrated Circuit (IC)
• Essence: Stores digital information in a compact and efficient manner
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Model: S29GL064N11FFIV22
• Capacity: 64 gigabits (8 gigabytes)
• Voltage Range: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Access Time: 110 ns
• Erase/Program Cycles: 100,000 cycles
• Data Retention: Up to 20 years

Detailed Pin Configuration

The S29GL064N11FFIV22 has a total of 48 pins. Here is the detailed pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write Enable
5. CE#: Chip Enable
6. OE#: Output Enable
7. RP#/BYTE#: Reset/Byte#
8. RY/BY#: Ready/Busy#
9. WP#/ACC: Write Protect/Acceleration
10. VSS: Ground

Functional Features

• High-speed read and write operations for quick data access
• Efficient erase and program cycles for reliable data management
• Advanced architecture for enhanced performance and endurance
• Built-in error correction mechanisms for data integrity
• Low power consumption for energy efficiency

Advantages

• Large storage capacity allows for extensive data storage
• High-speed operations enable fast data retrieval and writing
• Reliable and durable design ensures long-term data retention
• Low power consumption prolongs battery life in portable devices

Disadvantages

• Parallel interface may limit compatibility with certain systems
• Limited erase/program cycles compared to some newer flash memory technologies

Working Principles

The S29GL064N11FFIV22 utilizes a floating gate transistor technology to store digital information. It consists of an array of memory cells, each capable of storing a single bit of data. The state of each memory cell is determined by the presence or absence of an electrical charge on its floating gate. This charge can be modified through programming and erased when necessary.

Detailed Application Field Plans

The S29GL064N11FFIV22 is commonly used in various electronic devices that require non-volatile data storage, such as:

1. Solid-state drives (SSDs)
2. Digital cameras
3. Set-top boxes
4. Automotive electronics
5. Industrial control systems

Detailed and Complete Alternative Models

1. S29GL032N11FAI040: 32 gigabit parallel flash memory
2. S29GL128N10TFI010: 128 gigabit parallel flash memory
3. S29GL256N11TAI020: 256 gigabit parallel flash memory
4. S29GL512N11FFI010: 512 gigabit parallel flash memory

These alternative models offer different capacities and features to suit specific application requirements.

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