S29GL512P10FFIR10

Product Overview

Category

The S29GL512P10FFIR10 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile: The S29GL512P10FFIR10 retains data even when power is turned off.
• High capacity: It has a storage capacity of 512 megabits (64 megabytes).
• Fast access time: The device offers a fast access time of 100 nanoseconds.
• Reliable: It provides reliable data storage with built-in error correction mechanisms.
• Low power consumption: The S29GL512P10FFIR10 operates at low power levels, making it suitable for battery-powered devices.

Package

The S29GL512P10FFIR10 is available in a compact and industry-standard package, which ensures compatibility with various electronic devices.

Essence

The essence of the S29GL512P10FFIR10 lies in its ability to provide high-capacity and reliable data storage in a compact form factor.

Packaging/Quantity

The device is typically packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package may vary but is commonly available in multiples of 100 units.

Specifications

• Storage Capacity: 512 megabits (64 megabytes)
• Access Time: 100 nanoseconds
• Supply Voltage: 3.0V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: Fine-pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The S29GL512P10FFIR10 follows a standard pin configuration for parallel flash memory devices. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte enable control
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect/control input
10. VSS: Ground

Functional Features

• High-speed data transfer: The S29GL512P10FFIR10 supports fast data transfer rates, allowing for quick read and write operations.
• Error correction: The device incorporates error correction mechanisms to ensure data integrity.
• Block erase capability: It allows for efficient erasure of large blocks of data, enhancing flexibility in data management.
• Low power consumption: The S29GL512P10FFIR10 operates at low power levels, extending battery life in portable devices.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Reliable data storage
• Compact form factor
• Low power consumption

Disadvantages

• Limited compatibility with certain older devices that do not support parallel flash memory interfaces.

Working Principles

The S29GL512P10FFIR10 utilizes a parallel interface to communicate with the host device. It stores data in non-volatile memory cells, which retain information even when power is turned off. The device uses advanced algorithms to manage data storage, retrieval, and error correction.

Detailed Application Field Plans

The S29GL512P10FFIR10 finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

• S29GL256P10FFIR10: 256 megabit (32 megabyte) flash memory device with similar characteristics and specifications.
• S29GL1G08A10TFIR20: 1 gigabit (128 megabyte) flash memory device with higher storage capacity and comparable features.

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