FT24C02A-UDR-B

Product Overview

Category

FT24C02A-UDR-B belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This chip is commonly used for non-volatile data storage in various electronic devices such as microcontrollers, computers, and consumer electronics.

Characteristics

• Electrically erasable: The FT24C02A-UDR-B can be erased and reprogrammed electrically, making it convenient for updating stored data.
• Non-volatile: The chip retains data even when power is removed.
• High storage capacity: This model has a storage capacity of 2 kilobits (256 bytes).
• Low power consumption: The chip operates on low power, making it suitable for battery-powered devices.
• I2C interface: It uses the I2C (Inter-Integrated Circuit) protocol for communication.

Package

The FT24C02A-UDR-B comes in a small outline integrated circuit (SOIC) package, which provides ease of integration into electronic circuits.

Essence

The essence of this chip lies in its ability to store and retrieve data reliably, while offering flexibility for updates and low power consumption.

Packaging/Quantity

The FT24C02A-UDR-B is typically packaged in reels or tubes, with each reel containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Storage Capacity: 2 kilobits (256 bytes)
• Operating Voltage: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Write Cycle Endurance: 1 million cycles
• Data Retention: 100 years

Detailed Pin Configuration

The FT24C02A-UDR-B chip has a total of 8 pins, each serving a specific purpose:

1. VCC: Power supply voltage
2. SDA: Serial data input/output pin for I2C communication
3. SCL: Serial clock input pin for I2C communication
4. WP: Write protect pin (optional)
5. A0, A1: Address selection pins
6. A2: Chip address selection pin
7. GND: Ground

Functional Features

• Random access: The chip allows random access to any memory location, enabling efficient data retrieval.
• Byte-level read and write operations: Data can be written or read at the byte level, providing flexibility in managing stored information.
• Hardware write protection: The WP pin can be used to protect the stored data from accidental modification.
• Sequential read mode: The chip supports sequential read operations, allowing faster access to consecutive memory locations.

Advantages and Disadvantages

Advantages

• Electrically erasable and reprogrammable
• Non-volatile data storage
• High storage capacity
• Low power consumption
• Compact package size
• Flexible addressing options

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively slower write speeds compared to some alternatives

Working Principles

The FT24C02A-UDR-B utilizes EEPROM technology, which employs floating-gate transistors to store and retrieve data. When data is written, an electric charge is trapped in the floating gate, altering the transistor's behavior. This charge can be removed during the erasing process, allowing the transistor to return to its original state. The stored data can be accessed by applying appropriate voltages to the chip's pins.

Detailed Application Field Plans

The FT24C02A-UDR-B chip finds applications in various fields, including but not limited to: - Microcontroller-based systems - Embedded systems - Industrial automation - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

1. FT24C01A-UDR-B: 1 kilobit (128 bytes) storage capacity
2. FT24C04A-UDR-B: 4 kilobits (512 bytes) storage capacity
3. FT24C08A-UDR-B: 8 kilobits (1024 bytes) storage capacity
4. FT24C16A-UDR-B: 16 kilobits (2048 bytes) storage capacity

These alternative models offer different storage capacities to suit specific application requirements.

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