FT24C128A-UDR-B

Product Overview

Category

The FT24C128A-UDR-B belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: The FT24C128A-UDR-B retains stored data even when power is removed.
• High capacity: It has a storage capacity of 128 kilobits (16 kilobytes).
• I2C interface: The device communicates with the host system using the widely-used I2C protocol.
• Low power consumption: The FT24C128A-UDR-B operates at low power levels, making it suitable for battery-powered devices.
• High reliability: It offers excellent data retention and endurance characteristics.

Package

The FT24C128A-UDR-B is available in a compact and industry-standard 8-pin SOP (Small Outline Package) format.

Essence

The essence of the FT24C128A-UDR-B lies in its ability to provide reliable and non-volatile data storage in a compact form factor.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of FT24C128A-UDR-B devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 128 kilobits (16 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Operating Voltage: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Write Cycle Endurance: 1 million cycles
• Data Retention: 100 years

Detailed Pin Configuration

The FT24C128A-UDR-B has the following pin configuration:

1. A0: Address Input
2. A1: Address Input
3. A2: Address Input
4. GND: Ground
5. SDA: Serial Data Input/Output
6. SCL: Serial Clock Input
7. WP: Write Protect
8. VCC: Power Supply

Functional Features

• Random Access: The FT24C128A-UDR-B allows random access to any memory location, enabling efficient data retrieval.
• Byte and Page Write: It supports both byte-level and page-level write operations, providing flexibility in data storage.
• Write Protection: The WP pin can be used to protect the stored data from accidental modification.
• Software Reset: The device can be reset using specific commands, allowing for easy initialization.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Low power consumption extends battery life.
• Compact package size enables integration into space-constrained designs.
• Wide operating voltage range enhances compatibility with different systems.

Disadvantages

• Limited storage capacity compared to other non-volatile memory options.
• Relatively slower write speeds compared to some alternative models.
• Higher cost per kilobyte of storage compared to certain competing technologies.

Working Principles

The FT24C128A-UDR-B utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping charges within its memory cells, which can be selectively read or modified using the I2C interface. The non-volatile nature of EEPROM ensures that the stored data remains intact even when power is removed.

Detailed Application Field Plans

The FT24C128A-UDR-B finds application in various fields, including but not limited to: - Microcontrollers and embedded systems - Consumer electronics (e.g., smart appliances, wearable devices) - Industrial automation and control systems - Automotive electronics - Medical devices

Detailed and Complete Alternative Models

1. FT24C256A-UDR-B: Offers double the storage capacity of FT24C128A-UDR-B (256 kilobits).
2. AT24C32: Provides a lower-cost alternative with 32 kilobits of storage.
3. M24C64: Offers higher write speeds and larger storage capacity (64 kilobits).

These alternative models cater to different requirements and can be considered based on specific project needs.

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