FT24C256A-UDR-B

Product Overview

Category

The FT24C256A-UDR-B belongs to the category of non-volatile memory integrated circuits.

Use

This product is primarily used for data storage in various electronic devices, such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: The FT24C256A-UDR-B retains stored data even when power is disconnected.
• High capacity: With a storage capacity of 256 kilobits (32 kilobytes), it offers ample space for data storage.
• Low power consumption: The device operates efficiently, consuming minimal power during read and write operations.
• I2C interface: It utilizes the popular I2C communication protocol for easy integration into existing systems.

Package

The FT24C256A-UDR-B is available in a compact and industry-standard 8-pin SOP (Small Outline Package) format.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in a small form factor, making it suitable for a wide range of applications.

Packaging/Quantity

The FT24C256A-UDR-B is typically packaged in reels or tubes, with each containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 256 kilobits (32 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Operating Voltage: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Write Cycle Endurance: 1 million cycles
• Data Retention: Up to 100 years

Detailed Pin Configuration

The FT24C256A-UDR-B features an 8-pin SOP package with the following pin configuration:

1. A0: Address Input
2. A1: Address Input
3. A2: Address Input
4. GND: Ground
5. SDA: Serial Data Input/Output
6. SCL: Serial Clock Input
7. WP: Write Protect
8. VCC: Power Supply

Functional Features

• Random Access: The FT24C256A-UDR-B allows for random access to any memory location, enabling efficient data retrieval.
• Byte and Page Write: It supports both byte-level and page-level write operations, providing flexibility in storing data.
• Hardware Write Protection: The WP pin can be used to protect the memory from accidental writes, ensuring data integrity.
• Acknowledge Support: The device provides acknowledge signals during communication, allowing for reliable data transfer.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High storage capacity for accommodating large amounts of data.
• Low power consumption for energy-efficient operation.
• Compact package size enables easy integration into various electronic devices.
• I2C interface simplifies communication with other components.

Disadvantages

• Limited storage capacity compared to some other non-volatile memory options.
• Slower write speeds compared to volatile memory technologies.
• Susceptible to electromagnetic interference due to its small form factor.

Working Principles

The FT24C256A-UDR-B utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping charges within a floating gate, which can be electrically modified to represent binary values. During read operations, the stored charges are sensed and converted back into digital data.

Detailed Application Field Plans

The FT24C256A-UDR-B finds applications in various fields, including: 1. Microcontrollers: Used for storing program code, configuration data, and user settings. 2. Embedded Systems: Provides non-volatile storage for critical system parameters and calibration data. 3. Consumer Electronics: Enables data storage in devices such as smart TVs, set-top boxes, and audio systems.

Detailed and Complete Alternative Models

1. AT24C256: Manufactured by Atmel, this EEPROM offers similar specifications and functionality to the FT24C256A-UDR-B.
2. CAT24C256: Produced by ON Semiconductor, this alternative model provides a compatible pin configuration and I2C interface.
3. M24C256: Manufactured by STMicroelectronics, this EEPROM offers a wide operating voltage range and high endurance.

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