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FT93C46A-IDR-B
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FT93C46A-IDR-B

Product Overview

Category

The FT93C46A-IDR-B belongs to the category of integrated circuits (ICs).

Use

This product is commonly used for non-volatile memory storage in various electronic devices.

Characteristics

  • Non-volatile: The FT93C46A-IDR-B retains stored data even when power is disconnected.
  • Compact size: This IC is designed to be small and space-efficient.
  • Low power consumption: It operates with minimal power requirements.
  • High reliability: The FT93C46A-IDR-B ensures data integrity and durability.

Package

The FT93C46A-IDR-B is available in a standard 8-pin SOIC (Small Outline Integrated Circuit) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile memory storage in a compact form factor.

Packaging/Quantity

The FT93C46A-IDR-B is typically packaged in reels, containing a quantity of 2500 units per reel.

Specifications

  • Memory capacity: 1 kilobit (128 x 8 bits)
  • Operating voltage: 2.5V - 5.5V
  • Operating temperature range: -40°C to +85°C
  • Write cycle endurance: 1 million cycles
  • Data retention: 100 years

Detailed Pin Configuration

The FT93C46A-IDR-B features the following pin configuration:

  1. Chip Select (/CS)
  2. Serial Clock (SCK)
  3. Serial Data Input (SI)
  4. Serial Data Output (SO)
  5. Write Enable (/W)
  6. VCC (Power Supply)
  7. Ground (GND)
  8. Not Connected (NC)

Functional Features

  • Sequential read and write operations
  • Byte-wise random access
  • Software and hardware write protection
  • Self-timed programming cycle
  • Automatic erase before write

Advantages and Disadvantages

Advantages

  • Non-volatile memory ensures data retention even during power loss.
  • Compact size allows for integration into various electronic devices.
  • Low power consumption prolongs battery life.
  • High reliability guarantees data integrity.

Disadvantages

  • Limited memory capacity compared to other storage solutions.
  • Slower read and write speeds compared to volatile memory options.
  • Higher cost per bit of storage compared to some alternatives.

Working Principles

The FT93C46A-IDR-B utilizes an electrically erasable programmable read-only memory (EEPROM) technology. It stores data in a grid of memory cells, which can be individually programmed or erased using electrical signals. The stored data can be accessed sequentially or randomly, allowing for flexible usage in different applications.

Detailed Application Field Plans

The FT93C46A-IDR-B finds application in various electronic devices, including but not limited to: - Automotive electronics - Consumer electronics - Industrial control systems - Medical devices - Communication equipment

Detailed and Complete Alternative Models

  1. FT93C46A-IDR
  2. FT93C46A-IDR-T
  3. FT93C46A-IDR-G
  4. FT93C46A-IDR-GT

These alternative models offer similar functionality and specifications, providing flexibility for different design requirements.

In conclusion, the FT93C46A-IDR-B is a compact and reliable non-volatile memory IC that finds application in diverse electronic devices. Its high reliability, low power consumption, and small form factor make it a suitable choice for various industries.

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi FT93C46A-IDR-B dalam penyelesaian teknikal

Sure! Here are 10 common questions and answers related to the application of FT93C46A-IDR-B in technical solutions:

  1. Q: What is FT93C46A-IDR-B? A: FT93C46A-IDR-B is a serial EEPROM (Electrically Erasable Programmable Read-Only Memory) chip that can store data electronically.

  2. Q: What is the storage capacity of FT93C46A-IDR-B? A: FT93C46A-IDR-B has a storage capacity of 1 kilobit (128 bytes).

  3. Q: How is FT93C46A-IDR-B connected to a microcontroller or other devices? A: FT93C46A-IDR-B uses a simple 3-wire interface (clock, data in, and data out) to communicate with microcontrollers or other devices.

  4. Q: Can FT93C46A-IDR-B be used for non-volatile memory storage in embedded systems? A: Yes, FT93C46A-IDR-B is commonly used as non-volatile memory storage in various embedded systems.

  5. Q: What is the operating voltage range of FT93C46A-IDR-B? A: FT93C46A-IDR-B operates within a voltage range of 2.5V to 5.5V.

  6. Q: Is FT93C46A-IDR-B compatible with I2C communication protocol? A: No, FT93C46A-IDR-B uses a different 3-wire interface and is not compatible with the I2C protocol.

  7. Q: Can FT93C46A-IDR-B be used for storing sensitive data like passwords? A: Yes, FT93C46A-IDR-B can be used to store sensitive data like passwords, but additional encryption and security measures are recommended.

  8. Q: What is the typical write endurance of FT93C46A-IDR-B? A: FT93C46A-IDR-B has a typical write endurance of 1 million cycles, meaning it can be written to and erased approximately 1 million times before potential failure.

  9. Q: Can FT93C46A-IDR-B operate in extreme temperature conditions? A: Yes, FT93C46A-IDR-B is designed to operate within a wide temperature range, typically from -40°C to +85°C.

  10. Q: Are there any specific programming requirements for FT93C46A-IDR-B? A: FT93C46A-IDR-B requires specific programming commands and protocols to read from, write to, and erase its memory cells. The datasheet provides detailed information on programming requirements.

Please note that these answers are general and may vary depending on the specific application and implementation of FT93C46A-IDR-B in a technical solution.