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IDT71V25761S200PF
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IDT71V25761S200PF

Product Overview

Category

The IDT71V25761S200PF belongs to the category of semiconductor memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

  • High storage capacity
  • Fast access times
  • Non-volatile memory
  • Low power consumption

Package

The IDT71V25761S200PF is available in a small form factor package, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to provide reliable and efficient data storage capabilities for electronic systems.

Packaging/Quantity

The IDT71V25761S200PF is typically packaged in trays or reels, with quantities varying depending on customer requirements.

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 256K x 16 bits
  • Operating Voltage: 3.3V
  • Access Time: 20 ns
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: 48-pin TSOP

Detailed Pin Configuration

  1. A0
  2. A1
  3. A2
  4. A3
  5. A4
  6. A5
  7. A6
  8. A7
  9. A8
  10. A9
  11. A10
  12. A11
  13. A12
  14. A13
  15. A14
  16. A15
  17. VCC
  18. OE#
  19. CE#
  20. WE#
  21. I/O0
  22. I/O1
  23. I/O2
  24. I/O3
  25. I/O4
  26. I/O5
  27. I/O6
  28. I/O7
  29. I/O8
  30. I/O9
  31. I/O10
  32. I/O11
  33. I/O12
  34. I/O13
  35. I/O14
  36. I/O15
  37. GND
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • High-speed data access
  • Low power consumption
  • Easy integration into electronic systems
  • Reliable data retention
  • Multiple chip enable options for flexible usage

Advantages and Disadvantages

Advantages

  • Fast access times allow for efficient data retrieval.
  • Low power consumption helps conserve energy in electronic devices.
  • Reliable data retention ensures the integrity of stored information.
  • Multiple chip enable options provide flexibility in system design.

Disadvantages

  • Limited storage capacity compared to other memory technologies.
  • Higher cost per bit compared to some alternative memory solutions.
  • Sensitivity to environmental factors such as temperature and voltage fluctuations.

Working Principles

The IDT71V25761S200PF operates based on the principles of static random access memory (SRAM). It utilizes a combination of flip-flops and logic gates to store and retrieve digital information. The stored data remains intact as long as power is supplied to the device.

Detailed Application Field Plans

The IDT71V25761S200PF finds applications in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Consumer electronics - Industrial control systems

Detailed and Complete Alternative Models

  1. MT48LC16M16A2P-75: 256Mb SDRAM, 16M x 16 bits, 3.3V, 7.5 ns access time, 54-pin TSOP package.
  2. AT25SF041-SSHD-T: 4Mb Serial Flash Memory, 512K x 8 bits, 3.3V, 104 MHz clock frequency, 8-pin SOIC package.
  3. CY7C1021CV33-10ZSXI: 128K x 8 bits SRAM, 3.3V, 10 ns access time, 32-pin TSOP package.

These alternative models offer different specifications and features, providing options for various application requirements.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi IDT71V25761S200PF dalam penyelesaian teknikal

Sure! Here are 10 common questions and answers related to the application of IDT71V25761S200PF in technical solutions:

  1. Q: What is IDT71V25761S200PF? A: IDT71V25761S200PF is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V25761S200PF? A: The IDT71V25761S200PF has a capacity of 256 kilobits (Kb), which is equivalent to 32 kilobytes (KB).

  3. Q: What is the operating voltage range for IDT71V25761S200PF? A: The operating voltage range for IDT71V25761S200PF is typically between 4.5 volts and 5.5 volts.

  4. Q: What is the access time of IDT71V25761S200PF? A: The access time of IDT71V25761S200PF is 20 nanoseconds (ns), meaning it takes approximately 20 ns to read or write data.

  5. Q: Can IDT71V25761S200PF be used in battery-powered devices? A: Yes, IDT71V25761S200PF can be used in battery-powered devices as long as the operating voltage range is within the device's power supply capabilities.

  6. Q: Is IDT71V25761S200PF compatible with standard microcontrollers? A: Yes, IDT71V25761S200PF is compatible with standard microcontrollers that support SRAM interfacing.

  7. Q: Does IDT71V25761S200PF require any external components for operation? A: No, IDT71V25761S200PF does not require any external components for basic operation. However, additional support circuitry may be needed depending on the specific application.

  8. Q: Can IDT71V25761S200PF operate at high temperatures? A: Yes, IDT71V25761S200PF is designed to operate within a wide temperature range, typically from -40°C to 85°C.

  9. Q: What are the package options available for IDT71V25761S200PF? A: IDT71V25761S200PF is available in a 32-pin plastic leaded chip carrier (PLCC) package.

  10. Q: Are there any known limitations or considerations when using IDT71V25761S200PF? A: Some considerations include proper power supply decoupling, signal integrity, and ensuring compatibility with the microcontroller's voltage levels and timing requirements.

Please note that these answers are general and may vary depending on the specific technical solution and application requirements.