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IDT71V25761S200PF8
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IDT71V25761S200PF8

Product Overview

Category

The IDT71V25761S200PF8 belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for data storage and retrieval purposes.

Characteristics

  • High-speed performance
  • Large storage capacity
  • Low power consumption
  • Reliable operation

Package

The IDT71V25761S200PF8 is available in a small form factor package, which allows for easy integration into various electronic systems.

Essence

This IC serves as a crucial component in electronic devices, enabling efficient data storage and retrieval operations.

Packaging/Quantity

The IDT71V25761S200PF8 is typically packaged in reels or trays, with each package containing a specific quantity of ICs.

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 256K x 16 bits
  • Operating Voltage: 2.5V
  • Access Time: 20ns
  • Interface: Parallel
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: 48-pin Plastic Fine-Pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The IDT71V25761S200PF8 has a total of 48 pins, each serving a specific function. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. VSSQ
  19. A0
  20. A1
  21. A2
  22. A3
  23. A4
  24. A5
  25. A6
  26. A7
  27. A8
  28. A9
  29. A10
  30. A11
  31. A12
  32. A13
  33. A14
  34. A15
  35. CE1
  36. CE2
  37. WE
  38. OE
  39. UB/LB
  40. BYTE
  41. ADSP
  42. ADSC
  43. ADSP
  44. ADSC
  45. ADSP
  46. ADSC
  47. ADSP
  48. ADSC

Functional Features

  • High-speed data access and retrieval
  • Low power consumption during standby mode
  • Easy integration into various electronic systems
  • Reliable operation in harsh environmental conditions

Advantages and Disadvantages

Advantages

  • High-speed performance enables efficient data processing.
  • Large storage capacity allows for extensive data storage requirements.
  • Low power consumption helps conserve energy in electronic devices.
  • Reliable operation ensures consistent performance over time.

Disadvantages

  • Limited compatibility with certain older electronic systems.
  • Higher cost compared to alternative memory technologies.
  • Sensitivity to electrostatic discharge (ESD) requires careful handling during installation.

Working Principles

The IDT71V25761S200PF8 operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The IC utilizes an array of transistors to store and retrieve data quickly and efficiently.

Detailed Application Field Plans

The IDT71V25761S200PF8 finds applications in various electronic devices, including but not limited to: - Personal computers - Servers - Networking equipment - Telecommunications devices - Automotive electronics

Detailed and Complete Alternative Models

  1. Micron MT45W8MW16BGX-701 WT
  2. Samsung K4B2G1646E-BCK0
  3. Cypress CY7C1049DV33-10ZSXI
  4. Nanya NT5CC128M16IP-DI
  5. Hynix H5TC4G63AFR-PBA

These alternative models offer similar functionality and can be used as substitutes for the IDT71V25761S200PF8 in various applications.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi IDT71V25761S200PF8 dalam penyelesaian teknikal

Sure! Here are 10 common questions and answers related to the application of IDT71V25761S200PF8 in technical solutions:

  1. Question: What is the IDT71V25761S200PF8?
    Answer: The IDT71V25761S200PF8 is a high-speed, low-power CMOS static RAM (SRAM) with a capacity of 256K x 36 bits.

  2. Question: What is the operating voltage range for this SRAM?
    Answer: The IDT71V25761S200PF8 operates at a voltage range of 3.3V ± 0.3V.

  3. Question: What is the maximum clock frequency supported by this SRAM?
    Answer: This SRAM supports a maximum clock frequency of 200 MHz.

  4. Question: Can I use this SRAM in battery-powered devices?
    Answer: Yes, the IDT71V25761S200PF8 is designed to operate at low power, making it suitable for battery-powered applications.

  5. Question: Does this SRAM have any built-in error correction capabilities?
    Answer: No, the IDT71V25761S200PF8 does not have built-in error correction capabilities. External error correction techniques may be required if needed.

  6. Question: What is the access time of this SRAM?
    Answer: The access time of the IDT71V25761S200PF8 is 10 ns.

  7. Question: Can I interface this SRAM with microcontrollers or processors?
    Answer: Yes, this SRAM can be easily interfaced with microcontrollers or processors using standard address, data, and control signals.

  8. Question: Is this SRAM compatible with other memory devices?
    Answer: Yes, the IDT71V25761S200PF8 is compatible with other SRAMs and can be used in conjunction with them in memory subsystems.

  9. Question: What is the package type for this SRAM?
    Answer: The IDT71V25761S200PF8 comes in a 100-pin TQFP (Thin Quad Flat Package) package.

  10. Question: Can I use this SRAM in industrial temperature environments?
    Answer: Yes, this SRAM is designed to operate in industrial temperature ranges (-40°C to +85°C), making it suitable for harsh environments.

Please note that these answers are general and may vary depending on the specific requirements and application of the IDT71V25761S200PF8 in your technical solution.