IDT71V25761SA183BGI

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: Ball Grid Array (BGA)
• Essence: Provides high-performance data storage and retrieval capabilities for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, quantity depends on customer requirements

Specifications

• Memory Type: Synchronous SRAM
• Density: 256K x 36 bits
• Operating Voltage: 1.8V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Pin Count: 119

Detailed Pin Configuration

The IDT71V25761SA183BGI has a total of 119 pins. The pin configuration is as follows:

• Pins 1-36: Data Input/Output (DQ0-DQ35)
• Pins 37-38: Address Inputs (A0-A1)
• Pins 39-46: Chip Enable (CE), Output Enable (OE), Write Enable (WE), Byte Enable (BE0-BE3)
• Pins 47-54: Clock Inputs (CLK, CLKEN, CLKFB, CLKOUT)
• Pins 55-56: Power Supply (VDD, VSS)
• Pins 57-64: Miscellaneous Control Signals (LB, UB, ZZ, ZZI, ZZII, ZZIII, ZZIV, ZZV)
• Pins 65-119: No Connection (NC)

Functional Features

• High-speed operation: The IDT71V25761SA183BGI offers fast access times, making it suitable for applications that require quick data retrieval.
• Low-power consumption: The device is designed to minimize power consumption, making it ideal for battery-powered devices or energy-efficient systems.
• Synchronous operation: The memory operates synchronously with an external clock signal, ensuring reliable and synchronized data transfers.
• Easy integration: The parallel interface simplifies the integration of the memory into various electronic systems.

Advantages and Disadvantages

Advantages: - High-speed operation allows for efficient data processing. - Low-power consumption extends battery life in portable devices. - Synchronous operation ensures reliable data transfers. - Easy integration into different electronic systems.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Higher cost per bit compared to some alternative memory solutions.

Working Principles

The IDT71V25761SA183BGI is a synchronous SRAM that stores and retrieves data using volatile memory cells. It operates by receiving address inputs, control signals, and clock inputs from the system. When a read operation is initiated, the memory outputs the requested data based on the provided address. During a write operation, the data is written to the specified memory location. The synchronous nature of the device ensures proper timing and synchronization of data transfers.

Detailed Application Field Plans

The IDT71V25761SA183BGI can be used in various applications, including:

1. Networking equipment: The high-speed and low-power characteristics make it suitable for use in routers, switches, and network interface cards.
2. Telecommunications systems: The memory can be utilized in base stations, voice/data communication systems, and wireless infrastructure equipment.
3. Industrial automation: The device can be integrated into programmable logic controllers (PLCs), motor control systems, and robotic applications.
4. Medical devices: Its reliability and fast access times make it suitable for medical imaging equipment, patient monitoring systems, and diagnostic devices.
5. Automotive electronics: The memory can be used in automotive control units, infotainment systems, and advanced driver-assistance systems (ADAS).

Detailed and Complete Alternative Models

1. Cypress CY62167EV30LL-45ZSXI: 16Mbit Synchronous SRAM, 45ns access time, 48-pin TSOP package.
2. Micron MT48LC4M32B2TG-6A: 128Mbit Synchronous SRAM, 6ns access time, 86-ball FBGA package.
3. Samsung K6R4016V1D-UI10: 64Mbit Synchronous SRAM, 10ns access time, 44-pin TSOP-II package.

These alternative models offer different capacities, access times, and package options to cater to various application requirements.

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