IDT71V25761YSA200BQI

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71V25761YSA200BQI is a high-speed, low-power 32K x 8 CMOS Static RAM (SRAM) designed for use in various electronic devices and systems.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Reliable performance - Easy integration into existing circuits

Package: The IDT71V25761YSA200BQI is available in a compact and durable BGA (Ball Grid Array) package.

Essence: This IC serves as a reliable and efficient memory component, providing fast and non-volatile storage capabilities for electronic devices.

Packaging/Quantity: The IDT71V25761YSA200BQI is typically packaged in reels or trays, with quantities varying based on customer requirements.

Specifications

• Memory Size: 32K x 8 bits
• Operating Voltage: 2.5V - 3.6V
• Access Time: 10 ns
• Standby Current: 1 µA (typical)
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA
• Pin Count: 48

Detailed Pin Configuration

The IDT71V25761YSA200BQI has a total of 48 pins, each serving a specific function within the circuit. The pin configuration is as follows:

(Pin Number - Pin Name - Function) 1 - VCC - Power Supply 2 - A0-A14 - Address Inputs 3 - CE1 - Chip Enable Input 4 - CE2 - Output Enable Input 5 - WE - Write Enable Input 6-13 - DQ0-DQ7 - Data Input/Output 14 - VSS - Ground

(Note: The remaining pins are not listed for brevity.)

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures efficient energy usage in electronic devices.
• Large storage capacity of 32K x 8 bits accommodates a wide range of data requirements.
• Reliable performance guarantees consistent and accurate data storage and retrieval.
• Easy integration into existing circuits simplifies the design and implementation process.

Advantages and Disadvantages

Advantages: - High-speed operation enables fast data processing. - Low power consumption prolongs battery life in portable devices. - Large storage capacity meets the demands of data-intensive applications. - Reliable performance ensures data integrity and system stability. - Easy integration simplifies circuit design and reduces development time.

Disadvantages: - Limited memory size compared to other higher-capacity options. - Higher cost per bit compared to larger memory modules. - Vulnerable to external electromagnetic interference.

Working Principles

The IDT71V25761YSA200BQI operates based on the principles of static random-access memory. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The IC utilizes a combination of transistors and capacitors to store and retrieve data quickly and efficiently.

Detailed Application Field Plans

The IDT71V25761YSA200BQI finds application in various electronic systems, including but not limited to: - Personal computers - Mobile devices - Networking equipment - Automotive electronics - Industrial control systems

Its high-speed operation, low power consumption, and reliable performance make it suitable for use in these fields where fast and efficient data storage is crucial.

Detailed and Complete Alternative Models

1. IDT71V25761S200BQI: Similar to the IDT71V25761YSA200BQI, but with a different package type (SOIC).
2. IDT71V25761YSA166BQI: A lower-speed variant of the IDT71V25761YSA200BQI, with an access time of 16 ns.
3. IDT71V25761YSA333BQI: A higher-speed variant of the IDT71V25761YSA200BQI, with an access time of 3.3 ns.

These alternative models offer different specifications and features to cater to specific application requirements.

(Note: Additional alternative models can be found in the product datasheet or by contacting the manufacturer.)

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