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IDT71V25761YSA200BQI8
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IDT71V25761YSA200BQI8

Product Overview

Category

The IDT71V25761YSA200BQI8 belongs to the category of integrated circuits (ICs).

Use

This IC is primarily used in electronic devices for data storage and retrieval purposes.

Characteristics

  • High-speed performance
  • Large storage capacity
  • Low power consumption
  • Reliable operation

Package

The IDT71V25761YSA200BQI8 is available in a compact and durable package, ensuring easy integration into various electronic systems.

Essence

The essence of this product lies in its ability to efficiently store and retrieve data, enabling smooth functioning of electronic devices.

Packaging/Quantity

The IDT71V25761YSA200BQI8 is typically packaged in trays or reels, with each package containing a specific quantity of ICs.

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 32M x 8 bits
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Pin Count: 44

Detailed Pin Configuration

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. A26
  29. A27
  30. A28
  31. A29
  32. A30
  33. A31
  34. OE#
  35. WE#
  36. CE#
  37. UB#
  38. LB#
  39. DQ0
  40. DQ1
  41. DQ2
  42. DQ3
  43. DQ4
  44. DQ5

Functional Features

  • High-speed data access and retrieval
  • Low power consumption during standby mode
  • Easy integration into various electronic systems
  • Reliable operation in extreme temperature conditions

Advantages and Disadvantages

Advantages

  • Fast data access time
  • Large storage capacity
  • Low power consumption
  • Reliable performance

Disadvantages

  • Limited compatibility with certain older electronic systems
  • Higher cost compared to alternative memory technologies

Working Principles

The IDT71V25761YSA200BQI8 operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The IC uses a combination of transistors and capacitors to store and retrieve data quickly and efficiently.

Detailed Application Field Plans

The IDT71V25761YSA200BQI8 finds applications in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

  1. IDT71V25761S200BQI8
  2. IDT71V25761SA200BQI8
  3. IDT71V25761YSA200BQI9
  4. IDT71V25761YSA200BQI10
  5. IDT71V25761YSA200BQI11

These alternative models offer similar functionality and specifications, providing flexibility in choosing the most suitable IC for specific applications.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi IDT71V25761YSA200BQI8 dalam penyelesaian teknikal

Sure! Here are 10 common questions and answers related to the application of IDT71V25761YSA200BQI8 in technical solutions:

  1. Question: What is the IDT71V25761YSA200BQI8?
    Answer: The IDT71V25761YSA200BQI8 is a high-speed, low-power, 3.3V synchronous SRAM (Static Random Access Memory) device.

  2. Question: What is the maximum operating frequency of the IDT71V25761YSA200BQI8?
    Answer: The IDT71V25761YSA200BQI8 can operate at a maximum frequency of 200 MHz.

  3. Question: What is the capacity of the IDT71V25761YSA200BQI8?
    Answer: The IDT71V25761YSA200BQI8 has a capacity of 256K x 36 bits.

  4. Question: What is the power supply voltage range for the IDT71V25761YSA200BQI8?
    Answer: The IDT71V25761YSA200BQI8 operates with a power supply voltage range of 3.135V to 3.465V.

  5. Question: Can the IDT71V25761YSA200BQI8 be used in battery-powered devices?
    Answer: Yes, the IDT71V25761YSA200BQI8 is designed to operate with low power consumption, making it suitable for battery-powered devices.

  6. Question: What is the access time of the IDT71V25761YSA200BQI8?
    Answer: The IDT71V25761YSA200BQI8 has an access time of 10 ns.

  7. Question: Does the IDT71V25761YSA200BQI8 support burst mode operation?
    Answer: Yes, the IDT71V25761YSA200BQI8 supports burst mode operation with programmable burst lengths.

  8. Question: Can the IDT71V25761YSA200BQI8 be used in industrial applications?
    Answer: Yes, the IDT71V25761YSA200BQI8 is suitable for industrial applications due to its wide operating temperature range and robust design.

  9. Question: What are the available package options for the IDT71V25761YSA200BQI8?
    Answer: The IDT71V25761YSA200BQI8 is available in a 100-pin TQFP (Thin Quad Flat Package) package.

  10. Question: Is the IDT71V25761YSA200BQI8 pin-compatible with other SRAM devices?
    Answer: No, the IDT71V25761YSA200BQI8 has its own unique pin configuration and is not pin-compatible with other SRAM devices.

Please note that these answers are general and may vary depending on the specific requirements and datasheet of the IDT71V25761YSA200BQI8.