ILD1150XUMA1

Product Overview

• Category: Optoelectronics
• Use: Optical Sensor
• Characteristics: High sensitivity, compact size, low power consumption
• Package: Surface Mount Device (SMD)
• Essence: Infrared Emitting Diode and Phototransistor
• Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Emitter Type: GaAs Infrared Emitting Diode
• Detector Type: NPN Silicon Phototransistor
• Peak Wavelength: 940 nm
• Forward Current (IF): 50 mA
• Collector-Emitter Voltage (VCEO): 30 V
• Power Dissipation (PD): 100 mW
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The ILD1150XUMA1 has a 4-pin configuration:

1. Pin 1: Anode of the Infrared Emitting Diode (Anode)
2. Pin 2: Cathode of the Infrared Emitting Diode (Cathode)
3. Pin 3: Collector of the Phototransistor (Collector)
4. Pin 4: Emitter of the Phototransistor (Emitter)

Functional Features

• High sensitivity to infrared light
• Compact size for easy integration into various applications
• Low power consumption for energy efficiency
• Reliable performance in a wide temperature range

Advantages and Disadvantages

Advantages: - High sensitivity allows for accurate detection of infrared signals - Compact size enables installation in space-constrained environments - Low power consumption reduces energy costs - Wide operating temperature range ensures functionality in diverse conditions

Disadvantages: - Limited peak wavelength range (940 nm) - Requires external circuitry for proper operation

Working Principles

The ILD1150XUMA1 combines an Infrared Emitting Diode and a Phototransistor to detect infrared light. When the diode is forward biased, it emits infrared radiation at a peak wavelength of 940 nm. The emitted light is then detected by the phototransistor, which generates a corresponding electrical signal. This signal can be used for various applications such as proximity sensing, object detection, and remote control systems.

Detailed Application Field Plans

The ILD1150XUMA1 finds applications in several fields, including:

1. Proximity Sensors: Used to detect the presence or absence of objects in close proximity.
2. Object Detection: Enables the identification and tracking of objects based on their interaction with infrared light.
3. Remote Control Systems: Utilized in devices that rely on infrared signals for wireless communication and control.

Detailed and Complete Alternative Models

1. ILD1135XUMA1: Similar to ILD1150XUMA1 but with a peak wavelength of 880 nm.
2. ILD1160XUMA1: Higher power version of ILD1150XUMA1 with a forward current of 100 mA.
3. ILD1185XUMA1: Enhanced sensitivity variant of ILD1150XUMA1 with improved low-light performance.

(Note: These alternative models are provided for reference purposes and may have different specifications and characteristics.)

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