IPD068N10N3GBTMA1
Product Overview
Category
The IPD068N10N3GBTMA1 belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications, such as in power supplies, motor control, and automotive systems.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Enhanced thermal performance
Package
The IPD068N10N3GBTMA1 is typically available in a TO-252-3 package.
Essence
This MOSFET is essential for efficient power conversion and control in various electronic systems.
Packaging/Quantity
It is usually packaged in reels with a quantity of 2500 units per reel.
Specifications
- Drain-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 68A
- RDS(ON) (Max) @ VGS = 10V: 6.8mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Power Dissipation (PD): 200W
Detailed Pin Configuration
The IPD068N10N3GBTMA1 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- Low gate charge
- Avalanche energy specified
- Improved dv/dt capability
Advantages and Disadvantages
Advantages
- High voltage tolerance
- Low on-resistance for reduced power loss
- Fast switching speed for improved efficiency
Disadvantages
- Sensitive to electrostatic discharge (ESD)
- Higher cost compared to standard MOSFETs
Working Principles
The IPD068N10N3GBTMA1 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPD068N10N3GBTMA1 is widely used in: - Switched-mode power supplies - Electric vehicle powertrains - Industrial motor drives - Solar inverters
Detailed and Complete Alternative Models
Some alternative models to the IPD068N10N3GBTMA1 include: - IPB068N10N3G - IPP068N10N3G - IPW068N10N3G
In conclusion, the IPD068N10N3GBTMA1 is a high-performance power MOSFET suitable for various power management applications, offering advantages such as high voltage capability and fast switching speed. However, it is important to consider its sensitivity to ESD and higher cost compared to standard MOSFETs when selecting it for a specific application.
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What is the maximum drain-source voltage of IPD068N10N3GBTMA1?
- The maximum drain-source voltage of IPD068N10N3GBTMA1 is 100V.
What is the continuous drain current rating of IPD068N10N3GBTMA1?
- The continuous drain current rating of IPD068N10N3GBTMA1 is 120A.
What is the on-state resistance (RDS(on)) of IPD068N10N3GBTMA1?
- The on-state resistance (RDS(on)) of IPD068N10N3GBTMA1 is typically 6.8mΩ.
What is the gate threshold voltage of IPD068N10N3GBTMA1?
- The gate threshold voltage of IPD068N10N3GBTMA1 is typically 2.5V.
What is the maximum junction temperature of IPD068N10N3GBTMA1?
- The maximum junction temperature of IPD068N10N3GBTMA1 is 175°C.
What are the typical applications for IPD068N10N3GBTMA1?
- IPD068N10N3GBTMA1 is commonly used in high-current, high-frequency switching applications such as motor control, power supplies, and inverters.
What is the recommended gate drive voltage for IPD068N10N3GBTMA1?
- The recommended gate drive voltage for IPD068N10N3GBTMA1 is typically 10V.
Does IPD068N10N3GBTMA1 require a heat sink for operation?
- Depending on the application and operating conditions, a heat sink may be required to ensure proper thermal management for IPD068N10N3GBTMA1.
Is IPD068N10N3GBTMA1 suitable for automotive applications?
- Yes, IPD068N10N3GBTMA1 is designed to meet the requirements for automotive applications, including AEC-Q101 qualification.
What are the key features of IPD068N10N3GBTMA1 that make it suitable for technical solutions?
- IPD068N10N3GBTMA1 features low RDS(on), high current capability, and robustness, making it suitable for demanding technical solutions requiring efficient power switching and high reliability.