IPD400N06NGBTMA1
Product Overview
Category
The IPD400N06NGBTMA1 belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications such as voltage regulation and switching circuits.
Characteristics
- High power handling capability
- Low on-state resistance
- Fast switching speed
- Low gate drive power requirement
Package
The IPD400N06NGBTMA1 is typically available in a TO-252 package.
Essence
This MOSFET is essential for efficient power control and management in various electronic devices and systems.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 40A
- RDS(ON) (Max) @ VGS = 10V: 4.0mΩ
- Gate-Source Voltage (VGS) ±20V
- Total Power Dissipation (PD): 200W
Detailed Pin Configuration
The IPD400N06NGBTMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-state resistance for minimal power loss
- High current handling capacity
- Fast switching speed for improved efficiency
- Wide operating voltage range
Advantages and Disadvantages
Advantages
- High power handling capability
- Low on-state resistance
- Fast switching speed
- Suitable for high-frequency applications
Disadvantages
- Higher cost compared to standard MOSFETs
- Sensitive to static discharge
Working Principles
The IPD400N06NGBTMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a suitable voltage is applied to the gate terminal, it allows the flow of current between the drain and source terminals, enabling efficient power regulation and switching.
Detailed Application Field Plans
The IPD400N06NGBTMA1 is widely used in the following application fields: - Switching power supplies - Motor control - DC-DC converters - Battery management systems - LED lighting
Detailed and Complete Alternative Models
Some alternative models to the IPD400N06NGBTMA1 include: - IPD400N06N3 G - IPD400N06N3 GATMA1 - IPD400N06NGBTMA2 - IPD400N06NGBTMAG
In conclusion, the IPD400N06NGBTMA1 is a high-performance power MOSFET with excellent characteristics and functional features, making it suitable for a wide range of power management applications.
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Question: What is the maximum drain-source voltage of IPD400N06NGBTMA1?
Answer: The maximum drain-source voltage of IPD400N06NGBTMA1 is 60V.Question: What is the continuous drain current rating of IPD400N06NGBTMA1?
Answer: The continuous drain current rating of IPD400N06NGBTMA1 is 120A.Question: Can IPD400N06NGBTMA1 be used in automotive applications?
Answer: Yes, IPD400N06NGBTMA1 is suitable for automotive applications.Question: What is the typical on-resistance of IPD400N06NGBTMA1?
Answer: The typical on-resistance of IPD400N06NGBTMA1 is 4.5mΩ.Question: Is IPD400N06NGBTMA1 compatible with logic level drive?
Answer: Yes, IPD400N06NGBTMA1 is compatible with logic level drive.Question: What is the operating temperature range of IPD400N06NGBTMA1?
Answer: The operating temperature range of IPD400N06NGBTMA1 is -55°C to 175°C.Question: Does IPD400N06NGBTMA1 have built-in protection features?
Answer: Yes, IPD400N06NGBTMA1 has built-in overcurrent and thermal protection.Question: Can IPD400N06NGBTMA1 be used in power management applications?
Answer: Yes, IPD400N06NGBTMA1 is suitable for power management applications.Question: What package type does IPD400N06NGBTMA1 come in?
Answer: IPD400N06NGBTMA1 is available in a TO-252-3 package.Question: Is IPD400N06NGBTMA1 RoHS compliant?
Answer: Yes, IPD400N06NGBTMA1 is RoHS compliant.