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IPD90N04S403ATMA1
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IPD90N04S403ATMA1

Product Overview

Category

The IPD90N04S403ATMA1 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic circuits and power applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Excellent thermal performance

Package

The IPD90N04S403ATMA1 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 90A
  • On-Resistance (RDS(on)): 4.3mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 60nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD90N04S403ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High current-carrying capability
  • Low conduction losses
  • Fast switching times
  • Suitable for high-frequency applications

Advantages

  • Efficient power handling
  • Reduced heat dissipation
  • Enhanced system reliability
  • Suitable for high-power applications

Disadvantages

  • Sensitive to electrostatic discharge (ESD)
  • Requires careful handling during assembly

Working Principles

The IPD90N04S403ATMA1 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Switch-mode power supplies - Motor control circuits - Automotive electronics - Industrial automation systems - Renewable energy applications

Detailed and Complete Alternative Models

Some alternative models to the IPD90N04S403ATMA1 include: - IRF4905 - FDP8878 - AUIRFN8409

In conclusion, the IPD90N04S403ATMA1 is a high-performance power MOSFET with excellent characteristics suitable for a wide range of power applications.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi IPD90N04S403ATMA1 dalam penyelesaian teknikal

  1. Question: What is the maximum drain-source voltage of IPD90N04S403ATMA1?
    Answer: The maximum drain-source voltage of IPD90N04S403ATMA1 is 40V.

  2. Question: What is the continuous drain current rating of IPD90N04S403ATMA1?
    Answer: The continuous drain current rating of IPD90N04S403ATMA1 is 90A.

  3. Question: Can IPD90N04S403ATMA1 be used in automotive applications?
    Answer: Yes, IPD90N04S403ATMA1 is suitable for automotive applications.

  4. Question: What is the typical on-resistance of IPD90N04S403ATMA1?
    Answer: The typical on-resistance of IPD90N04S403ATMA1 is 4.3mΩ.

  5. Question: Is IPD90N04S403ATMA1 RoHS compliant?
    Answer: Yes, IPD90N04S403ATMA1 is RoHS compliant.

  6. Question: What is the operating temperature range of IPD90N04S403ATMA1?
    Answer: The operating temperature range of IPD90N04S403ATMA1 is -55°C to 175°C.

  7. Question: Does IPD90N04S403ATMA1 have built-in ESD protection?
    Answer: Yes, IPD90N04S403ATMA1 features built-in ESD protection.

  8. Question: What is the gate threshold voltage of IPD90N04S403ATMA1?
    Answer: The gate threshold voltage of IPD90N04S403ATMA1 is typically 2.5V.

  9. Question: Can IPD90N04S403ATMA1 be used in power management applications?
    Answer: Yes, IPD90N04S403ATMA1 is commonly used in power management applications.

  10. Question: What package type does IPD90N04S403ATMA1 come in?
    Answer: IPD90N04S403ATMA1 is available in a TO-252-3 package.