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IPI120N06S4H1AKSA1
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IPI120N06S4H1AKSA1

Category: Power MOSFET

Use: The IPI120N06S4H1AKSA1 is a power MOSFET designed for use in high-power applications such as motor control, power supplies, and inverters.

Characteristics: This MOSFET features low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion applications. It is packaged in a TO-262-3 package.

Package: TO-262-3

Essence: The essence of the IPI120N06S4H1AKSA1 lies in its ability to efficiently switch high currents with minimal power loss, making it ideal for power electronics applications.

Packaging/Quantity: The IPI120N06S4H1AKSA1 is typically available in reels containing a specific quantity based on customer requirements.

Specifications:

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 120A
  • On-State Resistance (RDS(on)): 0.006 ohms
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 110nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration:

The IPI120N06S4H1AKSA1 features a standard three-pin configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features:

  • Low on-state resistance for high efficiency
  • High switching speed for fast operation
  • Low gate charge for reduced drive power requirements

Advantages:

  • High current handling capability
  • Low power dissipation
  • Fast switching times

Disadvantages:

  • Sensitive to overvoltage conditions
  • Requires careful consideration of gate drive circuitry

Working Principles:

The IPI120N06S4H1AKSA1 operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans:

The IPI120N06S4H1AKSA1 is well-suited for use in various high-power applications, including: - Motor control systems - Power supply units - Inverter circuits

Detailed and Complete Alternative Models:

  • IPI120N06S4-AT
  • IPP120N06S4L-04
  • IRF1405PBF

In conclusion, the IPI120N06S4H1AKSA1 power MOSFET offers high-performance characteristics suitable for demanding power electronics applications, with a range of alternative models available to meet specific design requirements.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi IPI120N06S4H1AKSA1 dalam penyelesaian teknikal

  1. What is the maximum drain current of IPI120N06S4H1AKSA1?

    • The maximum drain current of IPI120N06S4H1AKSA1 is 120A.

  2. What is the maximum drain-source voltage of IPI120N06S4H1AKSA1?

    • The maximum drain-source voltage of IPI120N06S4H1AKSA1 is 60V.

  3. What is the typical on-resistance of IPI120N06S4H1AKSA1?

    • The typical on-resistance of IPI120N06S4H1AKSA1 is 6mΩ.

  4. Can IPI120N06S4H1AKSA1 be used in automotive applications?

    • Yes, IPI120N06S4H1AKSA1 is suitable for automotive applications.

  5. What is the operating temperature range of IPI120N06S4H1AKSA1?

    • The operating temperature range of IPI120N06S4H1AKSA1 is -55°C to 175°C.

  6. Does IPI120N06S4H1AKSA1 have built-in protection features?

    • Yes, IPI120N06S4H1AKSA1 has built-in overcurrent protection and thermal shutdown features.

  7. Is IPI120N06S4H1AKSA1 RoHS compliant?

    • Yes, IPI120N06S4H1AKSA1 is RoHS compliant.

  8. What type of package does IPI120N06S4H1AKSA1 come in?

    • IPI120N06S4H1AKSA1 comes in a TO-220 fullpak package.

  9. What are some typical applications for IPI120N06S4H1AKSA1?

    • Typical applications for IPI120N06S4H1AKSA1 include motor control, power supplies, and DC-DC converters.

  10. What is the gate charge of IPI120N06S4H1AKSA1?

    • The gate charge of IPI120N06S4H1AKSA1 is 110nC.