IR21364JTRPBF

Product Overview

Category: Integrated Circuit (IC)

Use: Power Management IC

Characteristics: - High voltage level shifting - Gate driver for N-channel power MOSFETs or IGBTs - Suitable for motor control, solar inverters, and uninterruptible power supplies (UPS)

Package: SOIC-8

Essence: The IR21364JTRPBF is a high-voltage, high-speed power MOSFET and IGBT gate driver. It provides level shifting and protection features necessary for driving N-channel power MOSFETs or IGBTs in various applications.

Packaging/Quantity: The IR21364JTRPBF is available in a standard SOIC-8 package. It is typically sold in reels of 2500 units.

Specifications

• Supply Voltage Range: 10V to 20V
• Output Current: ±2A
• Operating Temperature Range: -40°C to +125°C
• Propagation Delay: 120ns (typical)
• Rise/Fall Time: 30ns (typical)
• Input Logic Compatibility: CMOS/TTL

Detailed Pin Configuration

The IR21364JTRPBF has the following pin configuration:

1. VCC: Supply voltage input
2. HO: High-side gate driver output
3. LO: Low-side gate driver output
4. VB: Bootstrap supply voltage input
5. VS: High-side floating supply return
6. COM: Common connection for low-side gate driver and bootstrap capacitor
7. LIN: Logic input
8. GND: Ground reference

Functional Features

• High-voltage level shifting capability
• Integrated bootstrap diode for high-side gate drive
• Under-voltage lockout protection
• Over-current protection
• Shoot-through protection
• Fault reporting output
• Logic input with Schmitt-trigger characteristics

Advantages and Disadvantages

Advantages: - High-voltage level shifting capability enables efficient driving of power MOSFETs or IGBTs - Integrated protection features enhance system reliability - Compact SOIC-8 package allows for easy integration into various applications - Wide operating temperature range ensures reliable performance in harsh environments

Disadvantages: - Limited output current may not be suitable for high-power applications - Requires external bootstrap capacitor for high-side gate drive

Working Principles

The IR21364JTRPBF operates by receiving logic input signals and generating corresponding gate drive signals to control the switching of N-channel power MOSFETs or IGBTs. It utilizes a high-voltage level shifting technique to ensure proper gate drive voltage levels for efficient operation.

The integrated bootstrap diode provides the necessary voltage supply for the high-side gate driver, eliminating the need for an additional isolated power supply. The under-voltage lockout and over-current protection features safeguard the system from potential faults and failures.

Detailed Application Field Plans

The IR21364JTRPBF is commonly used in the following application fields:

1. Motor Control: Provides precise and efficient control of motor speed and direction in industrial automation, robotics, and electric vehicles.
2. Solar Inverters: Enables the conversion of DC power generated by solar panels into AC power for grid connection.
3. Uninterruptible Power Supplies (UPS): Facilitates reliable backup power delivery during mains power outages.

Detailed and Complete Alternative Models

1. IR2104: Dual high- and low-side driver with similar features and package options.
2. IRS2110: Single high- and low-side driver with additional fault protection features.
3. IR2184: Half-bridge driver with independent high- and low-side outputs.

These alternative models offer similar functionality and can be considered as substitutes for the IR21364JTRPBF in various applications.

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