IRF6729MTR1PBF

Product Overview

Use

It is commonly used in power management applications such as voltage regulation and power switching.

Characteristics

High power handling capability
Low on-resistance
Fast switching speed
Low gate drive requirements

Package

The IRF6729MTR1PBF is typically available in a surface-mount D2PAK package.

Essence

This MOSFET is essential for efficient power control and management in various electronic devices and systems.

Packaging/Quantity

It is usually supplied in reels containing a specific quantity, such as 2500 units per reel.

Specifications

Drain-Source Voltage (VDS): 30V
Continuous Drain Current (ID): 120A
RDS(ON) (Max) @ VGS = 10V: 3.5mΩ
Gate-Source Voltage (VGS) ±20V

Detailed Pin Configuration

The IRF6729MTR1PBF has a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).

Functional Features

Low on-resistance for minimal power loss
High current-carrying capacity
Fast switching speed for improved efficiency
Enhanced thermal performance

Advantages

Suitable for high-power applications
Efficient power management
Compact and reliable design
Compatible with automated assembly processes

Disadvantages

Higher cost compared to lower-rated MOSFETs
May require careful thermal management in high-power applications

Working Principles

The IRF6729MTR1PBF operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

This MOSFET is widely used in various applications including: - Switching power supplies - Motor control - Battery management systems - DC-DC converters - LED lighting systems

Detailed and Complete Alternative Models

Some alternative models to the IRF6729MTR1PBF include: - IRF6729S2PBF - IRF6729L2PBF - IRF6729MPBF - IRF6729GPBF

In conclusion, the IRF6729MTR1PBF power MOSFET offers high-performance characteristics suitable for demanding power management applications across diverse industries.

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What is the IRF6729MTR1PBF?
- The IRF6729MTR1PBF is a power MOSFET designed for use in various technical solutions requiring high efficiency and reliability.
What is the maximum voltage and current rating of the IRF6729MTR1PBF?
- The IRF6729MTR1PBF has a maximum voltage rating of 30V and a continuous drain current rating of 120A.
What are the typical applications of the IRF6729MTR1PBF?
- Typical applications include motor control, power supplies, DC-DC converters, and other high-current switching applications.
What is the on-resistance of the IRF6729MTR1PBF?
- The on-resistance (RDS(on)) of the IRF6729MTR1PBF is typically around 1.5 milliohms.
Does the IRF6729MTR1PBF require a heatsink for operation?
- It is recommended to use a heatsink when operating the IRF6729MTR1PBF at high currents or in applications with high ambient temperatures.
Is the IRF6729MTR1PBF suitable for automotive applications?
- Yes, the IRF6729MTR1PBF is designed to meet the requirements for automotive applications, including AEC-Q101 qualification.
What is the thermal resistance of the IRF6729MTR1PBF?
- The typical junction-to-case thermal resistance (RθJC) of the IRF6729MTR1PBF is 0.5°C/W.
Can the IRF6729MTR1PBF be used in parallel to increase current handling capability?
- Yes, the IRF6729MTR1PBF can be used in parallel to increase the overall current handling capability in a design.
What are the key advantages of using the IRF6729MTR1PBF in technical solutions?
- The key advantages include low on-resistance, high current handling capability, and suitability for high-efficiency applications.
Are there any specific layout considerations when using the IRF6729MTR1PBF in a circuit?
- It is important to minimize parasitic inductance and ensure proper gate drive to optimize the performance of the IRF6729MTR1PBF in a circuit.