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IRF7351TRPBF

IRF7351TRPBF

Product Overview

  • Category: Power MOSFET
  • Use: Switching applications in power supplies, motor control, and other high current applications
  • Characteristics: Low on-resistance, fast switching speed, low gate charge
  • Package: D2PAK (TO-263)
  • Essence: High-efficiency power switching
  • Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications

  • Voltage Rating: 100V
  • Continuous Drain Current: 12A
  • RDS(ON): 9.5mΩ
  • Gate-Source Voltage (Max): ±20V
  • Total Gate Charge (Qg): 30nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

  • Pin 1: Source
  • Pin 2: Gate
  • Pin 3: Drain

Functional Features

  • Fast switching speed for improved efficiency
  • Low on-resistance minimizes power loss
  • High current handling capability for robust performance

Advantages

  • High efficiency due to low on-resistance
  • Suitable for high current applications
  • Wide operating temperature range

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The IRF7351TRPBF operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient gate-source voltage is applied, the MOSFET allows current to flow through, enabling efficient power switching.

Detailed Application Field Plans

This MOSFET is commonly used in various power electronics applications such as: - Switched-mode power supplies - Motor control circuits - DC-DC converters - Inverters

Detailed and Complete Alternative Models

  • IRF7350PbF: Similar specifications with a lower continuous drain current rating
  • IRF7351PbF: Comparable characteristics with a different package type

Note: The alternative models should be carefully selected based on specific application requirements.


This content provides a comprehensive overview of the IRF7351TRPBF Power MOSFET, covering its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi IRF7351TRPBF dalam penyelesaian teknikal

  1. What is the IRF7351TRPBF?

    • The IRF7351TRPBF is a power MOSFET designed for use in various technical solutions, such as power management and motor control applications.
  2. What is the maximum drain-source voltage of the IRF7351TRPBF?

    • The maximum drain-source voltage of the IRF7351TRPBF is 20V.
  3. What is the continuous drain current rating of the IRF7351TRPBF?

    • The continuous drain current rating of the IRF7351TRPBF is 6.7A.
  4. What is the on-state resistance (RDS(on)) of the IRF7351TRPBF?

    • The on-state resistance (RDS(on)) of the IRF7351TRPBF is typically 18mΩ at VGS = 10V.
  5. What are the typical applications of the IRF7351TRPBF?

    • Typical applications of the IRF7351TRPBF include power management, battery protection, motor control, and load switching.
  6. What is the gate-source voltage (VGS) range for proper operation of the IRF7351TRPBF?

    • The gate-source voltage (VGS) range for proper operation of the IRF7351TRPBF is ±20V.
  7. Is the IRF7351TRPBF suitable for high-frequency switching applications?

    • Yes, the IRF7351TRPBF is suitable for high-frequency switching applications due to its low on-state resistance and fast switching characteristics.
  8. Does the IRF7351TRPBF require a heatsink for thermal management?

    • The need for a heatsink depends on the specific application and the power dissipation requirements. In some cases, a heatsink may be necessary for optimal thermal management.
  9. What is the operating temperature range of the IRF7351TRPBF?

    • The operating temperature range of the IRF7351TRPBF is -55°C to 150°C.
  10. Is the IRF7351TRPBF RoHS compliant?

    • Yes, the IRF7351TRPBF is RoHS compliant, making it suitable for use in environmentally conscious designs.