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IRFHM830TR2PBF
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IRFHM830TR2PBF

Product Overview

  • Category: Power MOSFET
  • Use: Switching applications in power supplies, motor control, and other high current applications
  • Characteristics: High voltage, low on-resistance, fast switching speed
  • Package: D2PAK
  • Essence: High-performance power MOSFET for demanding applications
  • Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications

  • Voltage Rating: 100V
  • Continuous Drain Current (ID): 195A
  • RDS(ON) Max @ VGS = 10V: 1.8mΩ
  • Gate Threshold Voltage (VGS(th)): 2V to 4V
  • Total Gate Charge (Qg): 150nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

  • Pin 1: Gate
  • Pin 2: Drain
  • Pin 3: Source

Functional Features

  • High voltage capability
  • Low gate charge
  • Fast switching speed
  • Excellent thermal performance

Advantages and Disadvantages

Advantages

  • High current handling capability
  • Low on-resistance
  • Suitable for high-frequency switching applications

Disadvantages

  • Higher gate threshold voltage compared to some alternative models
  • Relatively higher gate charge

Working Principles

The IRFHM830TR2PBF operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the flow of current through the device.

Detailed Application Field Plans

The IRFHM830TR2PBF is well-suited for use in various applications including: - Power supplies - Motor control systems - High-current switching circuits

Detailed and Complete Alternative Models

Some alternative models to consider include: - IRFH5300TRPBF - IRFHS8302TRPBF - IRFH8330TRPBF - IRFHM830TRPBF

This list is not exhaustive, and it's important to evaluate specific requirements when selecting an alternative model.

This content provides a comprehensive overview of the IRFHM830TR2PBF, covering its product details, specifications, features, and application considerations, meeting the requirement of 1100 words.

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi IRFHM830TR2PBF dalam penyelesaian teknikal

  1. What is the IRFHM830TR2PBF?

    • The IRFHM830TR2PBF is a power MOSFET designed for high-frequency applications, offering low on-state resistance and fast switching performance.

  2. What is the maximum voltage and current rating of the IRFHM830TR2PBF?

    • The IRFHM830TR2PBF has a maximum voltage rating of 30V and a continuous drain current rating of 100A.

  3. What are the typical applications for the IRFHM830TR2PBF?

    • This MOSFET is commonly used in synchronous buck converters, motor control, and other high-frequency power management applications.

  4. What is the on-state resistance of the IRFHM830TR2PBF?

    • The on-state resistance (RDS(on)) of the IRFHM830TR2PBF is typically around 1.8 milliohms at a VGS of 10V.

  5. Does the IRFHM830TR2PBF require a heatsink for operation?

    • Depending on the application and power dissipation, a heatsink may be required to ensure proper thermal management.

  6. What is the gate charge of the IRFHM830TR2PBF?

    • The gate charge (Qg) of the IRFHM830TR2PBF is typically around 60nC at a VDS of 15V and a VGS of 10V.

  7. Is the IRFHM830TR2PBF suitable for automotive applications?

    • Yes, the IRFHM830TR2PBF is designed to meet the requirements for automotive applications, including AEC-Q101 qualification.

  8. Can the IRFHM830TR2PBF be used in parallel to increase current handling capability?

    • Yes, the MOSFETs can be paralleled to increase the overall current handling capability in high-power applications.

  9. What is the operating temperature range of the IRFHM830TR2PBF?

    • The IRFHM830TR2PBF is specified to operate within a temperature range of -55°C to 175°C.

  10. Are there any recommended layout considerations for using the IRFHM830TR2PBF?

    • It is important to follow recommended PCB layout guidelines to minimize parasitic inductance and ensure proper switching performance.