IS42S32200E-6BLI-TR

Product Overview

Category

IS42S32200E-6BLI-TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for storing and retrieving data quickly and efficiently.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact form factor
• Reliable performance

Package

IS42S32200E-6BLI-TR is available in a small outline, dual in-line memory module (SODIMM) package. This package type allows for easy installation and compatibility with various devices.

Essence

The essence of IS42S32200E-6BLI-TR lies in its ability to provide fast and reliable data storage and retrieval, making it an essential component in modern computing systems.

Packaging/Quantity

IS42S32200E-6BLI-TR is typically packaged in trays or reels, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities suitable for production purposes.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 32 Megabytes (MB)
• Organization: 2 Megabits x 16 bits x 4 banks
• Speed: 166 MHz
• Voltage: 3.3V
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

IS42S32200E-6BLI-TR follows a standard pin configuration for SODIMM modules. The pinout diagram below illustrates the detailed pin configuration:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS0
40. /CS1
41. /CS2
42. /CS3
43. /CKE
44. /CLK
45. /DQM0
46. /DQM1
47. VSS
48. VDD

Functional Features

• High-speed data transfer: IS42S32200E-6BLI-TR offers fast data access and transfer rates, ensuring efficient performance in demanding applications.
• Low power consumption: This module is designed to operate with minimal power consumption, making it suitable for battery-powered devices.
• Error correction: It incorporates error correction techniques to enhance data integrity and reliability.
• Burst mode operation: IS42S32200E-6BLI-TR supports burst mode operation, allowing for consecutive memory accesses without the need for repetitive address inputs.

Advantages and Disadvantages

Advantages

• Fast data access and transfer rates
• Large storage capacity
• Low power consumption
• Compact form factor
• Error correction for enhanced reliability

Disadvantages

• Limited capacity compared to higher-end memory modules
• Relatively slower speed compared to newer generations of DRAM

Working Principles

IS42S32200E-6BLI-TR operates based on the principles of synchronous dynamic random-access memory. It utilizes a clock signal to synchronize data transfers between the memory module and the host device. When a read or write command is issued, the module accesses the requested data from its internal memory cells and transfers it to/from the host device.

Detailed Application Field Plans

IS42S32200E-6BLI-TR finds applications in various fields, including: 1. Personal computers and laptops 2. Networking equipment 3. Industrial automation systems 4. Medical devices 5. Automotive electronics 6. Consumer electronics

Detailed and Complete Alternative Models

1. IS42S16160D-7TLI: 16 Megabytes (MB) SDRAM module with similar specifications.
2. IS45S16400F-7