IS42S32400B-6B-TR

Product Overview

Category

IS42S32400B-6B-TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, laptops, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S32400B-6B-TR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S32400B-6B-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

This product is typically packaged in trays or reels and is available in various quantities depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Memory Size: 256 Megabits (32 Megabytes)
• Organization: 4 banks x 4,194,304 words x 16 bits
• Operating Voltage: 2.5V ± 0.2V
• Clock Frequency: 166 MHz
• Access Time: 6 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S32400B-6B-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS0
40. /CS1
41. /CS2
42. /CS3
43. /CKE
44. /CLK
45. VDD
46. VDD
47. VSS
48. VSS

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings
• Support for multiple banks and chip selects

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Large storage capacity
• Low power consumption
• Compact form factor
• Reliable performance

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond a certain capacity

Working Principles

IS42S32400B-6B-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in capacitors within its memory cells, which are organized into banks. The data is accessed by sending commands and addresses through the control pins, and the read or write operations are synchronized with a clock signal. The data is stored and retrieved in bursts, allowing for efficient data transfer.

Detailed Application Field Plans

IS42S32400B-6B-TR finds applications in various electronic devices that require high-speed and reliable data storage and access. Some of the specific application fields include:

1. Personal computers
2. Laptops and notebooks
3. Servers and workstations
4. Gaming consoles
5. Mobile phones and tablets
6. Networking equipment
7. Industrial automation systems

Detailed and Complete Alternative Models

Some alternative models to IS42S32400B-6B-TR that offer similar functionality and specifications include:

1. MT48LC32M16A2P-75: Micron Technology Inc.
2. K4H511638D-UCB3: Samsung Electronics Co., Ltd.
3. HYB25D256800TTL-7: Infineon Technologies AG
4. H5PS5162GFR-S6C: SK Hynix Inc.
5. M12L2561616A-6TG: Alliance Memory Inc