IS42S32400D-7BI-TR

Product Overview

Category

IS42S32400D-7BI-TR belongs to the category of dynamic random access memory (DRAM) products.

Use

This product is primarily used for storing and retrieving digital information in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size

Package

IS42S32400D-7BI-TR is available in a small outline, thin profile (TSOP) package.

Essence

The essence of IS42S32400D-7BI-TR lies in its ability to provide fast and efficient data storage and retrieval capabilities in electronic devices.

Packaging/Quantity

This product is typically packaged in reels and is available in large quantities to meet the demands of manufacturers.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Memory Size: 256 Megabits (32 Megabytes)
• Organization: 4 banks x 4,194,304 words x 16 bits
• Operating Voltage: 2.5V - 3.3V
• Clock Frequency: Up to 166 MHz
• Access Time: 7 ns
• Interface: Parallel

Detailed Pin Configuration

The pin configuration of IS42S32400D-7BI-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. A16
37. A17
38. A18
39. A19
40. VSS
41. WE#
42. CAS#
43. RAS#
44. CS#
45. CKE
46. CLK
47. BA0
48. BA1
49. VDD
50. VDD

Functional Features

• Burst mode operation for efficient data transfer
• Auto-refresh and self-refresh modes to optimize power consumption
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings for flexibility

Advantages and Disadvantages

Advantages

• High-speed data access enables faster processing in electronic devices.
• Large storage capacity allows for the storage of a vast amount of digital information.
• Low power consumption helps prolong battery life in portable devices.
• Compact package size facilitates integration into space-constrained designs.

Disadvantages

• Sensitive to electrical noise, requiring careful design considerations for optimal performance.
• Relatively higher cost compared to other memory technologies such as NAND flash.

Working Principles

IS42S32400D-7BI-TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The stored information is accessed by applying appropriate voltage levels to the memory cells and reading the resulting electrical charges.

Detailed Application Field Plans

IS42S32400D-7BI-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to IS42S32400D-7BI-TR are: - MT48LC32M16A2P-75: 256 Megabit SDRAM with similar specifications. - K4S561632E-UC60: 256 Megabit SDRAM with comparable performance. - AS4C32M16SB-7TCN: 256 Megabit SDRAM offering similar features.

These alternative models provide similar functionality and can be used as substitutes depending on specific requirements and availability.

In conclusion, IS42S32400D-7BI-TR is a high-performance synchronous dynamic random access memory (SDRAM) product. It offers fast data access, large storage capacity, and low power consumption. Its compact package size makes it suitable for integration into