IS42S32800D-75EBLI-TR

Product Overview

Category

IS42S32800D-75EBLI-TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size

Package

IS42S32800D-75EBLI-TR is available in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S32800D-75EBLI-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

This product is typically packaged in trays or reels and is available in various quantities depending on customer requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 256 Megabytes (MB)
• Organization: 32 Megabytes x 8 bits
• Speed: 75 nanoseconds (ns)
• Voltage: 3.3 Volts (V)
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S32800D-75EBLI-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. WE#
12. CAS#
13. RAS#
14. A0
15. A1
16. A2
17. A3
18. A4
19. A5
20. A6
21. A7
22. A8
23. A9
24. A10
25. A11
26. A12
27. A13
28. A14
29. A15
30. VSS
31. CLK
32. CKE
33. CS#
34. BA0
35. BA1
36. VDD

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization

Advantages and Disadvantages

Advantages

• Fast data access speed enhances overall system performance.
• Large storage capacity allows for the handling of extensive data requirements.
• Low power consumption helps to prolong battery life in portable devices.
• Compact package size enables integration into space-constrained designs.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited scalability beyond a certain capacity.
• Susceptible to data loss in case of power failure without proper backup mechanisms.

Working Principles

IS42S32800D-75EBLI-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in cells that are organized in a matrix, with each cell holding a single bit of information. The memory controller sends commands and addresses to access specific data stored in these cells. The data is read or written by activating the appropriate row and column addresses.

Detailed Application Field Plans

IS42S32800D-75EBLI-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to IS42S32800D-75EBLI-TR include: - MT48LC32M8A2P-75 - K4S561632E-UC60 - HYB39S256160FE-7.5

These models offer similar specifications and functionality, providing options for different design requirements.

In conclusion, IS42S32800D-75EBLI-TR is a high-performance DRAM module that offers fast data access, large storage capacity, and low power consumption. It finds applications in various electronic devices and has alternative models available in the market.