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IS43DR16640B-25DBL-TR
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IS43DR16640B-25DBL-TR

Basic Information Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous dynamic random-access memory (SDRAM)
  • Package: Ball Grid Array (BGA)
  • Essence: Stores and retrieves digital information in electronic systems
  • Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

  • Part Number: IS43DR16640B-25DBL-TR
  • Organization: 16 Meg x 64
  • Voltage: 2.5V
  • Speed: 400 MHz
  • Operating Temperature Range: -40°C to +85°C
  • Interface: Double Data Rate (DDR) SDRAM
  • Pin Count: 90

Detailed Pin Configuration

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. DQ16
  19. DQ17
  20. DQ18
  21. DQ19
  22. DQ20
  23. DQ21
  24. DQ22
  25. DQ23
  26. DQ24
  27. DQ25
  28. DQ26
  29. DQ27
  30. DQ28
  31. DQ29
  32. DQ30
  33. DQ31
  34. BA0
  35. BA1
  36. A0
  37. A1
  38. A2
  39. A3
  40. A4
  41. A5
  42. A6
  43. A7
  44. A8
  45. A9
  46. A10
  47. A11
  48. A12
  49. A13
  50. A14
  51. A15
  52. A16
  53. A17
  54. A18
  55. A19
  56. A20
  57. A21
  58. A22
  59. A23
  60. A24
  61. A25
  62. A26
  63. A27
  64. A28
  65. A29
  66. A30
  67. A31
  68. CKE
  69. CS0#
  70. WE#
  71. CAS#
  72. RAS#
  73. CLK
  74. DM0
  75. DM1
  76. DQS0#
  77. DQS1#
  78. DQSN0#
  79. DQSN1#
  80. VSS
  81. VSS
  82. VSS
  83. VSS
  84. VSS
  85. VSS
  86. VSS
  87. VSS
  88. VSS
  89. VSS
  90. VDDQ

Functional Features

  • High-speed data transfer with a clock frequency of 400 MHz
  • Low power consumption for energy-efficient operation
  • Synchronous operation for precise timing control
  • Double Data Rate (DDR) technology for increased data transfer rates
  • Supports burst mode and random access operations
  • On-die termination for improved signal integrity

Advantages

  • Fast data transfer speeds enhance system performance
  • Low power consumption prolongs battery life in portable devices
  • Synchronous operation ensures reliable and accurate data retrieval
  • DDR technology enables higher data transfer rates compared to traditional SDRAM
  • Burst mode and random access support versatile memory access patterns
  • On-die termination reduces signal reflections and improves signal quality

Disadvantages

  • Higher cost compared to slower memory technologies
  • Requires proper timing and voltage control for optimal performance
  • Limited storage capacity compared to other memory devices
  • Sensitivity to electrical noise and interference

Working Principles

IS43DR16640B-25DBL-TR is a synchronous dynamic random-access memory (SDRAM) that stores and retrieves digital information in electronic systems. It operates by synchronizing data transfers with an external clock signal. The memory cells store binary data as charge in capacitors, which are refreshed periodically to maintain data integrity. The device uses DDR technology to achieve higher data transfer rates by transferring data on both the rising and falling edges of the clock signal.

Detailed Application Field Plans

IS43DR16640B-25DBL-TR is commonly used in various electronic devices and systems that require high-speed and low-power memory. Some application fields include: 1. Personal computers and laptops 2. Servers and data centers 3.

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi IS43DR16640B-25DBL-TR dalam penyelesaian teknikal

Sure! Here are 10 common questions and answers related to the application of IS43DR16640B-25DBL-TR in technical solutions:

  1. Question: What is the IS43DR16640B-25DBL-TR?
    Answer: The IS43DR16640B-25DBL-TR is a specific model of DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip.

  2. Question: What is the capacity of the IS43DR16640B-25DBL-TR?
    Answer: The IS43DR16640B-25DBL-TR has a capacity of 16 Megabits (Mb), which is equivalent to 2 Megabytes (MB).

  3. Question: What is the operating voltage of the IS43DR16640B-25DBL-TR?
    Answer: The IS43DR16640B-25DBL-TR operates at a voltage of 2.5V.

  4. Question: What is the speed rating of the IS43DR16640B-25DBL-TR?
    Answer: The IS43DR16640B-25DBL-TR has a speed rating of 25 nanoseconds (ns), which determines its access time.

  5. Question: What applications can the IS43DR16640B-25DBL-TR be used in?
    Answer: The IS43DR16640B-25DBL-TR can be used in various technical solutions, including embedded systems, networking equipment, telecommunications devices, and industrial applications.

  6. Question: Can the IS43DR16640B-25DBL-TR be used in mobile devices?
    Answer: Yes, the IS43DR16640B-25DBL-TR can be used in certain mobile devices that require DDR3 SDRAM.

  7. Question: Does the IS43DR16640B-25DBL-TR support ECC (Error Correction Code)?
    Answer: No, the IS43DR16640B-25DBL-TR does not support ECC. It is a non-ECC memory chip.

  8. Question: What is the package type of the IS43DR16640B-25DBL-TR?
    Answer: The IS43DR16640B-25DBL-TR comes in a 60-ball BGA (Ball Grid Array) package.

  9. Question: Can the IS43DR16640B-25DBL-TR be used as a standalone memory or does it require additional components?
    Answer: The IS43DR16640B-25DBL-TR requires additional components such as a memory controller and other supporting circuitry to function properly.

  10. Question: Is the IS43DR16640B-25DBL-TR a commonly available memory chip?
    Answer: Yes, the IS43DR16640B-25DBL-TR is a commonly available memory chip that can be sourced from various electronic component suppliers.