IS49NLC36160-25B

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed operation
  • Low power consumption
  • Large storage capacity
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory
• Packaging/Quantity: Available in reels, quantity varies based on customer requirements

Specifications

• Model: IS49NLC36160-25B
• Memory Type: NAND Flash
• Capacity: 16 gigabits (2 gigabytes)
• Organization: 8,192 blocks x 64 pages x 2,048 bytes
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Speed: Up to 25 MHz (SPI clock frequency)

Detailed Pin Configuration

The IS49NLC36160-25B has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. GND
3. /RESET
4. /WP (Write Protect)
5. /HOLD
6. /CS (Chip Select)
7. SIO0 (Serial Data Input/Output 0)
8. SIO1 (Serial Data Input/Output 1)
9. SIO2 (Serial Data Input/Output 2)
10. SIO3 (Serial Data Input/Output 3)
11. SCLK (Serial Clock)
12. NC (No Connection)
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed data transfer
• Reliable and durable non-volatile memory
• Support for SPI interface for easy integration with various systems
• Efficient power management for low power consumption
• Error correction and wear-leveling algorithms for enhanced reliability

Advantages and Disadvantages

Advantages

• Fast data transfer speeds
• Large storage capacity
• Low power consumption
• Compact BGA package for space-saving designs
• Reliable and durable non-volatile memory

Disadvantages

• Limited endurance compared to other types of memory
• Higher cost per gigabyte compared to traditional hard drives

Working Principles

The IS49NLC36160-25B is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. The memory cells are made up of floating-gate transistors that can trap or release electrons to represent binary data (0s and 1s). The data can be read, written, and erased electronically using the SPI interface.

Detailed Application Field Plans

The IS49NLC36160-25B is widely used in various electronic devices and systems, including: - Solid-state drives (SSDs) - USB flash drives - Memory cards (SD, microSD, etc.) - Embedded systems - Industrial control systems - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

• IS49NLC36160-25A: Similar specifications, but with a different package type (TSOP)
• IS49NLC36160-25C: Higher operating temperature range (-40°C to +105°C)
• IS49NLC36160-25D: Lower power consumption variant

These alternative models provide options for different application requirements and design considerations.

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