IS61LPS25618A-200B2LI

Product Overview

Category

IS61LPS25618A-200B2LI belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable performance

Package

IS61LPS25618A-200B2LI is available in a compact package that ensures easy integration into various electronic devices. The package type may vary depending on the manufacturer.

Essence

The essence of IS61LPS25618A-200B2LI lies in its ability to provide fast and efficient data storage and retrieval, contributing to the overall performance of electronic devices.

Packaging/Quantity

IS61LPS25618A-200B2LI is typically sold in reels or trays, with quantities varying based on customer requirements and manufacturer specifications.

Specifications

• Model: IS61LPS25618A-200B2LI
• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 256 Megabits (32 Megabytes)
• Speed: 200 MHz
• Interface: Parallel
• Voltage: 3.3V
• Operating Temperature: -40°C to +85°C
• Pin Count: 66 pins

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. A16
35. A17
36. A18
37. /CAS
38. /RAS
39. /WE
40. /CS
41. /OE
42. CLK
43. CKE
44. /LDQM
45. /UDQM
46. /BA0
47. /BA1
48. VSS
49. VSS
50. VSS
51. VSS
52. VSS
53. VSS
54. VSS
55. VSS
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS
61. VSS
62. VSS
63. VSS
64. VSS
65. VSS
66. VDD

Functional Features

• High-speed data transfer
• Burst mode operation
• Auto-refresh and self-refresh modes
• On-die termination (ODT) for improved signal integrity
• Low power standby mode
• Error correction code (ECC) support

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Efficient power consumption
• Large storage capacity
• Reliable performance
• Support for error correction

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited compatibility with older devices that do not support SDRAM

Working Principles

IS61LPS25618A-200B2LI operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The memory cells are organized into rows and columns, allowing for efficient read and write operations. The synchronous nature of SDRAM ensures that data transfers are synchronized with the system clock, enabling high-speed operation.

Detailed Application Field Plans

IS61LPS25618A-200B2LI finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Mobile phones and tablets - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

1. IS61LV25616AL-10TLI - 256 Megabit Synchronous DRAM, 10 ns speed, 3.3V voltage.
2. IS61WV102416BLL-10TLI - 256 Megabit Asynchronous SRAM, 10 ns speed,