IS61WV25616EDALL-20BLI

Product Overview

Category

IS61WV25616EDALL-20BLI belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Reliable performance
• Compact package size

Package

IS61WV25616EDALL-20BLI is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS61WV25616EDALL-20BLI is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 256K words × 16 bits
• Operating Voltage: 3.3V
• Access Time: 20 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 48

Detailed Pin Configuration

1. A0-A17: Address Inputs
2. DQ0-DQ15: Data Input/Output
3. WE: Write Enable
4. OE: Output Enable
5. CE: Chip Enable
6. UB/LB: Upper Byte/Lower Byte Control
7. VCC: Power Supply
8. GND: Ground

(Note: This is a simplified pin configuration. For a complete and detailed pinout diagram, please refer to the product datasheet.)

Functional Features

• High-speed access: The IS61WV25616EDALL-20BLI offers fast access times, allowing for quick data retrieval and processing.
• Low power consumption: This product is designed to minimize power consumption, making it suitable for battery-powered devices.
• Reliable performance: The SRAM technology used in this product ensures reliable and stable operation.
• Easy integration: The parallel interface simplifies the integration of IS61WV25616EDALL-20BLI into various electronic systems.

Advantages and Disadvantages

Advantages

• High-speed operation enables efficient data processing.
• Low power consumption prolongs battery life in portable devices.
• Large storage capacity accommodates a wide range of applications.
• Reliable performance ensures data integrity and system stability.
• Compact package size allows for space-saving designs.

Disadvantages

• Limited storage capacity compared to other memory technologies like NAND flash.
• Volatile memory requires constant power supply to retain data.

Working Principles

IS61WV25616EDALL-20BLI utilizes static random access memory (SRAM) technology. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The SRAM cells within the chip consist of flip-flops, which can hold data as long as power is supplied. The address inputs are used to select specific memory locations, while the data inputs/outputs facilitate the transfer of information between the chip and the external system.

Detailed Application Field Plans

IS61WV25616EDALL-20BLI finds applications in various electronic devices and systems, including: 1. Computers and servers 2. Networking equipment 3. Mobile phones and tablets 4. Automotive electronics 5. Industrial control systems 6. Medical devices 7. Consumer electronics

Detailed and Complete Alternative Models

1. IS61WV25616BLL-10TLI
2. IS61WV25616BLL-12TLI
3. IS61WV25616BLL-15TLI
4. IS61WV25616BLL-20TLI
5. IS61WV25616BLL-25TLI

(Note: The above list represents a few alternative models. Please refer to the manufacturer's documentation for a comprehensive list of alternative models.)

This entry provides an overview of IS61WV25616EDALL-20BLI, a semiconductor memory product. It includes information on its category, use, characteristics, package, essence, packaging/quantity, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.