IS61WV25616EDALL-20BLI-TR

Product Overview

Category

IS61WV25616EDALL-20BLI-TR belongs to the category of integrated circuits (ICs) specifically designed for memory storage.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and other digital systems.

Characteristics

• High-speed operation: The IS61WV25616EDALL-20BLI-TR offers fast read and write access times, making it suitable for applications that require quick data retrieval and storage.
• Large storage capacity: With a capacity of 256 megabits (32 megabytes), this memory chip provides ample space for storing a significant amount of data.
• Low power consumption: The IC is designed to operate efficiently with minimal power consumption, making it suitable for battery-powered devices.
• Reliable performance: The product ensures reliable data storage and retrieval, minimizing the risk of data loss or corruption.

Package and Quantity

The IS61WV25616EDALL-20BLI-TR is available in a compact Ball Grid Array (BGA) package. Each package contains one unit of the memory chip.

Specifications

• Part Number: IS61WV25616EDALL-20BLI-TR
• Memory Type: Static Random Access Memory (SRAM)
• Organization: 256Mbit x 16
• Operating Voltage: 2.7V - 3.6V
• Access Time: 20ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA
• Pin Count: 48

Detailed Pin Configuration

The IS61WV25616EDALL-20BLI-TR has a total of 48 pins. Here is a detailed pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. DQ8
27. DQ9
28. DQ10
29. DQ11
30. DQ12
31. DQ13
32. DQ14
33. DQ15
34. /WE
35. /OE
36. /UB
37. /LB
38. /CE1
39. /CE2
40. /CE3
41. /CE4
42. /CE5
43. /CE6
44. /CE7
45. /CE8
46. /CE9
47. /CE10
48. GND

Functional Features

• Random Access: The IS61WV25616EDALL-20BLI-TR allows for random access to any memory location, enabling efficient data retrieval and storage.
• High-Speed Operation: With a fast access time of 20ns, this memory chip ensures quick data transfer, reducing processing delays.
• Low Power Consumption: The IC is designed to operate with low power consumption, making it suitable for battery-powered devices.
• Easy Integration: The product can be easily integrated into various electronic systems due to its compact size and standardized interface.

Advantages and Disadvantages

Advantages

• High-speed operation enables quick data access.
• Large storage capacity accommodates a significant amount of data.
• Low power consumption prolongs battery life in portable devices.
• Reliable performance ensures data integrity.

Disadvantages

• Limited compatibility with certain older systems that do not support the parallel interface.
• Relatively higher cost compared to other memory technologies like NAND flash.

Working Principles

The IS61WV25616EDALL-20BLI-TR is based on Static Random Access Memory (SRAM) technology. It stores data using flip-flops, which retain information as long as power is supplied. The memory cells are organized in a matrix, allowing for random access to any location within the memory array. When data needs to be stored or retrieved, the appropriate address is provided, and the corresponding data is read from or written to the memory cells.

Detailed Application Field Plans

The IS61WV25616EDALL-20BLI-TR finds applications in various electronic devices and systems, including: 1. Personal computers and laptops 2. Mobile phones and smartphones 3. Tablets