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IS61WV25616EDBLL-10TLI
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IS61WV25616EDBLL-10TLI

Product Overview

Category

The IS61WV25616EDBLL-10TLI belongs to the category of high-speed CMOS static RAM (SRAM) chips.

Use

It is used as a high-speed, low-power memory solution for various electronic devices and systems.

Characteristics

  • High speed
  • Low power consumption
  • Non-volatile
  • Small form factor

Package

The IS61WV25616EDBLL-10TLI is typically available in a small outline integrated circuit (SOIC) package.

Essence

This SRAM chip provides fast and reliable data storage and retrieval capabilities for electronic devices.

Packaging/Quantity

The IS61WV25616EDBLL-10TLI is commonly packaged in reels and is available in varying quantities based on customer requirements.

Specifications

  • Organization: 32K x 8 bits
  • Voltage: 2.7V - 3.6V
  • Speed: 10ns access time
  • Operating Temperature: -40°C to 85°C
  • Interface: Parallel

Detailed Pin Configuration

The detailed pin configuration of the IS61WV25616EDBLL-10TLI includes address pins, data input/output pins, control pins, and power supply pins. Refer to the datasheet for the complete pinout diagram.

Functional Features

  • Fast access time
  • Low standby current
  • Easy interfacing with microcontrollers and other digital systems
  • Non-volatile data storage

Advantages

  • High-speed operation
  • Low power consumption
  • Reliable data retention
  • Compatibility with various electronic systems

Disadvantages

  • Limited storage capacity compared to other memory technologies
  • Sensitive to electromagnetic interference

Working Principles

The IS61WV25616EDBLL-10TLI operates by storing and retrieving data using a combination of volatile and non-volatile memory cells, allowing for fast and efficient data access.

Detailed Application Field Plans

The IS61WV25616EDBLL-10TLI is suitable for use in a wide range of applications, including: - Embedded systems - Networking equipment - Industrial automation - Consumer electronics - Automotive electronics

Detailed and Complete Alternative Models

  • IS61WV51216BLL-10TLI
  • IS61WV102416BLL-10TLI
  • IS61WV204816BLL-10TLI

In conclusion, the IS61WV25616EDBLL-10TLI is a high-speed, low-power SRAM chip that offers reliable data storage and retrieval capabilities for various electronic applications.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi IS61WV25616EDBLL-10TLI dalam penyelesaian teknikal

  1. What is the IS61WV25616EDBLL-10TLI?

    • The IS61WV25616EDBLL-10TLI is a 32M high-speed static RAM (SRAM) organized as 256K words by 16 bits.

  2. What are the typical applications of IS61WV25616EDBLL-10TLI?

    • It is commonly used in networking equipment, telecommunications systems, industrial control systems, and other applications requiring high-speed, low-power SRAM.

  3. What is the operating voltage range for IS61WV25616EDBLL-10TLI?

    • The operating voltage range is 2.4V to 3.6V.

  4. What is the access time of IS61WV25616EDBLL-10TLI?

    • The access time is 10ns, making it suitable for high-speed applications.

  5. Does IS61WV25616EDBLL-10TLI support battery backup operation?

    • Yes, it supports battery backup operation, which is useful for applications requiring data retention during power loss.

  6. What is the package type of IS61WV25616EDBLL-10TLI?

    • It is available in a 48-pin TSOP-II package, which is commonly used in surface mount applications.

  7. Can IS61WV25616EDBLL-10TLI be used in automotive applications?

    • Yes, it is qualified for automotive applications and meets the AEC-Q100 standard.

  8. What is the standby current consumption of IS61WV25616EDBLL-10TLI?

    • The standby current consumption is very low, typically less than 1µA.

  9. Does IS61WV25616EDBLL-10TLI have a data retention feature?

    • Yes, it has a data retention feature that allows it to retain stored data for an extended period without power.

  10. Is IS61WV25616EDBLL-10TLI RoHS compliant?

    • Yes, it is RoHS compliant, ensuring it meets environmental standards for hazardous substance restrictions.