IS61WV5128EDBLL-10TLI-TR

Product Overview

Category

IS61WV5128EDBLL-10TLI-TR belongs to the category of static random-access memory (SRAM) chips.

Use

This product is commonly used in electronic devices and systems that require high-speed read and write operations, such as computers, smartphones, and networking equipment.

Characteristics

• High-speed operation: The IS61WV5128EDBLL-10TLI-TR offers fast access times, allowing for efficient data retrieval and storage.
• Low power consumption: This SRAM chip is designed to minimize power usage, making it suitable for battery-powered devices.
• Small form factor: The compact package size of the IS61WV5128EDBLL-10TLI-TR enables its integration into space-constrained electronic designs.
• Wide temperature range: It can operate reliably across a broad temperature range, making it suitable for various environments.

Package and Quantity

The IS61WV5128EDBLL-10TLI-TR is typically available in a small outline integrated circuit (SOIC) package. The quantity per package may vary depending on the supplier.

Specifications

• Memory Size: 512 kilobits (64 kilobytes)
• Organization: 32K words x 16 bits
• Access Time: 10 nanoseconds
• Supply Voltage: 3.3 volts
• Operating Temperature Range: -40°C to +85°C
• Data Retention Voltage: 2 volts (minimum)

Detailed Pin Configuration

The IS61WV5128EDBLL-10TLI-TR has a total of 48 pins. Here is a detailed pin configuration:

1. A0-A14: Address Inputs
2. DQ0-DQ15: Data Input/Output
3. WE: Write Enable
4. OE: Output Enable
5. CE1, CE2: Chip Enables
6. UB, LB: Upper Byte and Lower Byte Enables
7. VCC: Power Supply (3.3V)
8. GND: Ground

Functional Features

• Random Access: The IS61WV5128EDBLL-10TLI-TR allows for random access to any memory location, enabling efficient data retrieval.
• High-Speed Operation: With an access time of 10 nanoseconds, this SRAM chip ensures fast read and write operations.
• Non-Volatile Storage: The IS61WV5128EDBLL-10TLI-TR retains stored data even when power is disconnected, ensuring data integrity.

Advantages and Disadvantages

Advantages

• Fast access times enable quick data retrieval.
• Low power consumption makes it suitable for battery-powered devices.
• Compact form factor allows for easy integration into electronic designs.
• Wide temperature range ensures reliable operation in various environments.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Volatile memory requires constant power supply to retain data.

Working Principles

The IS61WV5128EDBLL-10TLI-TR operates based on the principles of static random-access memory. It stores data using flip-flops, which retain their state until changed. When an address is provided, the corresponding data can be read or written to the memory cell. The chip utilizes control signals such as write enable (WE) and output enable (OE) to manage data transfer between the memory and external devices.

Detailed Application Field Plans

The IS61WV5128EDBLL-10TLI-TR finds applications in various fields, including:

1. Computer Systems: Used as cache memory to improve system performance.
2. Networking Equipment: Enables fast data buffering and packet processing.
3. Telecommunications: Facilitates real-time data storage and retrieval in communication systems.
4. Industrial Automation: Supports high-speed data processing in control systems.
5. Automotive Electronics: Used for storing critical data in automotive applications.

Detailed and Complete Alternative Models

1. IS61WV5128EDBLL-12TLI-TR: Similar to the IS61WV5128EDBLL-10TLI-TR, but with a slightly slower access time of 12 nanoseconds.
2. IS61WV5128EDBLL-15TLI-TR: Offers a lower access time of 15 nanoseconds, suitable for applications with less stringent speed requirements.
3. IS61WV5128EDBLL-10MLI-TR: Provides an extended temperature range (-55°C to +125°C) for operation in harsh environments.

These alternative models offer similar functionality to the IS61WV5128EDBLL-10TLI-TR but may have variations in access time, temperature range, or other specifications.

In conclusion, the IS61W