IS62WV1288BLL-55HI-TR

Product Overview

Category

IS62WV1288BLL-55HI-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile memory
• Large storage capacity
• Reliable performance

Package

IS62WV1288BLL-55HI-TR is available in a compact package that ensures easy integration into various electronic devices. The package type may vary depending on the manufacturer.

Essence

The essence of IS62WV1288BLL-55HI-TR lies in its ability to store and retrieve digital information quickly and reliably, making it an essential component in modern electronic devices.

Packaging/Quantity

IS62WV1288BLL-55HI-TR is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package can vary, but it is commonly available in quantities suitable for mass production.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 128K words x 8 bits
• Operating Voltage: 3.3V
• Access Time: 55ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS62WV1288BLL-55HI-TR is as follows:

1. Vcc (Power Supply)
2. WE (Write Enable)
3. OE (Output Enable)
4. A0-A16 (Address Inputs)
5. DQ0-DQ7 (Data Inputs/Outputs)
6. CE1, CE2 (Chip Enables)
7. UB, LB (Upper Byte, Lower Byte)
8. CLK (Clock Input)
9. NC (No Connection)
10. Vss (Ground)

Functional Features

• High-speed operation allows for fast data access and retrieval.
• Low power consumption ensures efficient energy usage in electronic devices.
• Non-volatile memory retains stored data even when power is disconnected.
• Large storage capacity accommodates a significant amount of digital information.
• Reliable performance guarantees data integrity and system stability.

Advantages and Disadvantages

Advantages

• Fast access time enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Non-volatile memory eliminates the need for constant data backup.
• Large storage capacity meets the demands of modern applications.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Higher cost compared to other types of memory technologies.
• Limited scalability in terms of storage capacity compared to other memory types.
• Susceptible to electromagnetic interference (EMI) due to its parallel interface.

Working Principles

IS62WV1288BLL-55HI-TR operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is disconnected. The memory cells within IS62WV1288BLL-55HI-TR are organized in a matrix, with each cell capable of storing one bit of data. The address inputs are used to select a specific memory location, while the data inputs/outputs facilitate the transfer of information between the memory and the external device.

Detailed Application Field Plans

IS62WV1288BLL-55HI-TR finds application in various electronic devices and systems, including but not limited to: - Computers and laptops - Smartphones and tablets - Networking equipment - Automotive electronics - Industrial control systems - Medical devices - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to IS62WV1288BLL-55HI-TR that offer similar functionality and specifications include: - MT45W8MW16BGX-701IT (Micron Technology Inc.) - CY62157EV30LL-45ZSXI (Cypress Semiconductor Corporation) - AS6C62256-55PCN (Alliance Memory Inc.) - K6R4016V1D-UI10 (Samsung Electronics Co., Ltd.)

These alternative models can be considered based on specific requirements, availability, and compatibility with the target system.

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