IS62WV6416BLL-55TLI

Product Overview

Category

IS62WV6416BLL-55TLI belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices.

Characteristics

• High-speed performance
• Low power consumption
• Non-volatile memory
• Reliable and durable

Package

IS62WV6416BLL-55TLI is available in a compact package, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and efficiently.

Packaging/Quantity

IS62WV6416BLL-55TLI is typically packaged individually and is available in various quantities depending on the customer's requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 64 Megabits (8 Megabytes)
• Operating Voltage: 3.3V
• Access Time: 55 nanoseconds
• Organization: 8M x 8 bits
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS62WV6416BLL-55TLI is as follows:

1. VCC - Power Supply
2. GND - Ground
3. A0-A22 - Address Inputs
4. DQ0-DQ7 - Data Inputs/Outputs
5. WE - Write Enable
6. OE - Output Enable
7. CE - Chip Enable
8. UB/LB - Upper Byte/Lower Byte Control
9. BYTE - Byte/Word Organization Selection
10. R/B - Ready/Busy Output

Functional Features

• High-speed access and operation
• Low power consumption in both active and standby modes
• Easy integration into various electronic devices
• Reliable and durable performance
• Suitable for applications requiring fast data storage and retrieval

Advantages and Disadvantages

Advantages

• High-speed performance allows for quick data access
• Low power consumption helps conserve energy
• Non-volatile memory ensures data retention even during power loss
• Reliable and durable, suitable for long-term use

Disadvantages

• Limited capacity compared to other memory technologies
• Higher cost per unit compared to some alternative models

Working Principles

IS62WV6416BLL-55TLI operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that it requires a continuous power supply to retain the stored information. The memory cells within the device are organized in an array, with each cell capable of storing one bit of data. Accessing and manipulating the data is achieved through the control signals provided by the pin configuration.

Detailed Application Field Plans

IS62WV6416BLL-55TLI finds application in various electronic devices, including but not limited to: - Personal computers - Servers - Networking equipment - Industrial automation systems - Medical devices - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to IS62WV6416BLL-55TLI include: - IS62WV12816BLL-55TLI: 128 Megabit SRAM with similar characteristics - IS62WV25616BLL-55TLI: 256 Megabit SRAM with similar characteristics - IS62WV51216BLL-55TLI: 512 Megabit SRAM with similar characteristics

These alternative models offer higher capacities while maintaining similar performance and characteristics.

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