IS62WV6416DBLL-45TLI-TR

Product Overview

Category

IS62WV6416DBLL-45TLI-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Non-volatile memory
• Low power consumption
• Large storage capacity
• Reliable performance

Package

IS62WV6416DBLL-45TLI-TR is available in a small outline package (SOP) format.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

IS62WV6416DBLL-45TLI-TR is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 64K words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 45ns
• Standby Current: 10μA (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VCC
2. A0-A15
3. DQ0-DQ15
4. /CE
5. /OE
6. /WE
7. /UB/LB
8. /BYTE
9. /RST
10. NC

(Note: The pin configuration may vary depending on the specific package variant.)

Functional Features

• Fast random access time for efficient data retrieval.
• Low power consumption for extended battery life in portable devices.
• Easy integration into various electronic systems due to its compact size and standard interface.
• Non-volatile memory ensures data retention even when power is disconnected.
• Reliable performance with high endurance and data integrity.

Advantages

• High-speed operation allows for quick data access and processing.
• Low power consumption helps conserve energy and prolong device battery life.
• Large storage capacity accommodates a wide range of applications.
• Non-volatile memory ensures data persistence, eliminating the need for frequent backups.
• Reliable performance guarantees data integrity and system stability.

Disadvantages

• Limited storage capacity compared to other types of memory devices like hard drives or solid-state drives.
• Relatively higher cost per unit compared to some alternative memory technologies.
• Vulnerable to physical damage, such as electrostatic discharge (ESD), which can lead to data loss.

Working Principles

IS62WV6416DBLL-45TLI-TR operates based on the principles of static random access memory (SRAM). It stores digital information in a matrix of memory cells, each consisting of a flip-flop circuit. The stored data remains intact as long as power is supplied to the device. When accessed, the memory controller activates the appropriate row and column lines to read or write data from/to the selected memory cell.

Detailed Application Field Plans

IS62WV6416DBLL-45TLI-TR finds application in various electronic devices and systems, including but not limited to: - Personal computers - Laptops and notebooks - Servers and data centers - Mobile phones and tablets - Automotive electronics - Industrial control systems - Medical equipment - Consumer electronics

Detailed and Complete Alternative Models

1. IS62WV6416BLL-45TLI-TR
2. IS62WV6416DBLL-55TLI-TR
3. IS62WV6416BLL-55TLI-TR
4. IS62WV6416BLL-70TLI-TR
5. IS62WV6416DBLL-70TLI-TR

(Note: The list of alternative models may vary based on availability and specific requirements.)

In conclusion, IS62WV6416DBLL-45TLI-TR is a high-speed, non-volatile memory device primarily used for data storage and retrieval in various electronic systems. Its compact size, low power consumption, and reliable performance make it suitable for a wide range of applications. However, it has limitations in terms of storage capacity and vulnerability to physical damage. Understanding its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models is crucial for effectively utilizing this product in different electronic designs.