IXFK80N50Q3
Product Overview
- Category: Power MOSFET
- Use: High-power switching applications
- Characteristics: High voltage, high current capability, low on-state resistance
- Package: TO-264
- Essence: Efficient power management
- Packaging/Quantity: Available in reels of 1000 units
Specifications
- Voltage Rating: 500V
- Current Rating: 80A
- On-State Resistance: 0.038Ω
- Gate Charge: 110nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The IXFK80N50Q3 features a standard TO-264 pin configuration with three pins: gate (G), drain (D), and source (S).
Functional Features
- High voltage capability
- Low on-state resistance
- Fast switching speed
- Low gate charge
Advantages and Disadvantages
- Advantages:
- Suitable for high-power applications
- Low conduction losses
- Fast switching performance
- Disadvantages:
- Higher gate drive requirements
- Sensitivity to over-voltage conditions
Working Principles
The IXFK80N50Q3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.
Detailed Application Field Plans
This MOSFET is ideal for use in high-power applications such as: - Switched-mode power supplies - Motor control - Inverters - Welding equipment
Detailed and Complete Alternative Models
- Alternative Models:
- IRFP4668PbF
- STW75N60M2
- FDPF33N25T
In conclusion, the IXFK80N50Q3 is a high-performance power MOSFET suitable for demanding high-power switching applications, offering efficient power management and reliable operation in various industrial and commercial settings.
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What is IXFK80N50Q3?
- IXFK80N50Q3 is a high voltage, high speed IGBT (Insulated Gate Bipolar Transistor) designed for various technical solutions requiring efficient power switching.
What are the key features of IXFK80N50Q3?
- The key features of IXFK80N50Q3 include a high voltage rating of 500V, a high current rating of 80A, low VCE(sat) for improved efficiency, and fast switching speeds.
In what technical applications can IXFK80N50Q3 be used?
- IXFK80N50Q3 is commonly used in applications such as motor drives, power supplies, renewable energy systems, welding equipment, and induction heating.
What are the thermal characteristics of IXFK80N50Q3?
- IXFK80N50Q3 has low thermal resistance and is designed to efficiently dissipate heat, making it suitable for high-power applications.
How does IXFK80N50Q3 contribute to energy efficiency in technical solutions?
- IXFK80N50Q3's low VCE(sat) and fast switching speeds help minimize power losses, leading to improved energy efficiency in various applications.
What protection features does IXFK80N50Q3 offer?
- IXFK80N50Q3 provides built-in diodes for freewheeling protection, overcurrent protection, and short-circuit protection, enhancing the reliability of technical solutions.
Can IXFK80N50Q3 be used in parallel configurations for higher power applications?
- Yes, IXFK80N50Q3 can be used in parallel configurations to increase current handling capability and power output in larger technical solutions.
What are the recommended operating conditions for IXFK80N50Q3?
- The recommended operating conditions include a specified range of gate-to-emitter voltage, collector current, and junction temperature to ensure optimal performance.
How does IXFK80N50Q3 handle high-frequency switching in technical solutions?
- IXFK80N50Q3 is designed to handle high-frequency switching with minimal losses, making it suitable for applications requiring rapid on/off cycles.
Where can I find detailed application notes and reference designs for using IXFK80N50Q3 in technical solutions?
- Detailed application notes and reference designs for IXFK80N50Q3 can be found on the manufacturer's website or by contacting their technical support team for assistance.