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IXFN48N55
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IXFN48N55

Product Overview

Category

The IXFN48N55 belongs to the category of power MOSFETs.

Use

It is commonly used in power electronics applications such as motor control, power supplies, and inverters.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • High reliability

Package

The IXFN48N55 is typically available in a TO-268 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels with a quantity of 500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 550V
  • Continuous Drain Current (ID): 48A
  • RDS(ON) Max @ VGS = 10V: 0.055Ω
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 300W

Detailed Pin Configuration

The pin configuration of the IXFN48N55 includes three pins: gate, drain, and source. The gate pin is used to control the flow of current between the drain and source.

Functional Features

  • High voltage capability allows for use in high-power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid control of power flow.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • High reliability

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Requires careful handling due to sensitivity to static electricity

Working Principles

The IXFN48N55 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the conductivity between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently regulate the flow of current in a circuit.

Detailed Application Field Plans

The IXFN48N55 is widely used in the following applications: - Motor control systems for industrial machinery - Power supply units for telecommunications equipment - Inverters for renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the IXFN48N55 include: - IRFP4668PbF - FDPF51N25T - STW45NM50FD

In conclusion, the IXFN48N55 power MOSFET offers high-performance characteristics suitable for demanding power electronics applications. Its high voltage capability, low on-resistance, and fast switching speed make it an ideal choice for efficient power management and control.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi IXFN48N55 dalam penyelesaian teknikal

  1. What is the maximum drain-source voltage of IXFN48N55?

    • The maximum drain-source voltage of IXFN48N55 is 550V.

  2. What is the continuous drain current rating of IXFN48N55?

    • The continuous drain current rating of IXFN48N55 is 48A.

  3. What is the on-state resistance (RDS(on)) of IXFN48N55?

    • The on-state resistance (RDS(on)) of IXFN48N55 is typically 0.038 ohms.

  4. Can IXFN48N55 be used in high-power applications?

    • Yes, IXFN48N55 is suitable for high-power applications due to its high voltage and current ratings.

  5. What type of package does IXFN48N55 come in?

    • IXFN48N55 comes in a TO-268 package.

  6. Is IXFN48N55 suitable for switching power supplies?

    • Yes, IXFN48N55 is commonly used in switching power supply applications due to its high current and voltage ratings.

  7. What are the typical applications of IXFN48N55?

    • Typical applications of IXFN48N55 include motor drives, inverters, and power supplies.

  8. Does IXFN48N55 require a heat sink for operation?

    • Yes, IXFN48N55 may require a heat sink for efficient thermal management, especially in high-power applications.

  9. What is the gate threshold voltage of IXFN48N55?

    • The gate threshold voltage of IXFN48N55 is typically around 4V.

  10. Is IXFN48N55 suitable for automotive applications?

    • Yes, IXFN48N55 is suitable for automotive applications such as electric vehicle power systems and battery management.