The IXTF200N10T belongs to the category of power MOSFETs and is designed for use in various electronic applications. This MOSFET offers high performance and reliability, making it suitable for a wide range of power management tasks. The IXTF200N10T is characterized by its low on-state resistance, high current capability, and efficient thermal management. It is typically available in a TO-220 package and is sold individually.
The IXTF200N10T features a standard TO-220 pin configuration with three leads: gate (G), drain (D), and source (S).
Advantages: - High current rating allows for versatile applications - Low on-state resistance minimizes power dissipation - Wide operating temperature range enhances flexibility
Disadvantages: - Larger package size may limit use in space-constrained designs - Higher cost compared to lower-rated MOSFETs
The IXTF200N10T operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently regulate power flow in electronic circuits.
The IXTF200N10T is well-suited for a variety of applications, including: - Power supplies - Motor control - Inverters - Audio amplifiers - LED lighting systems
IXTF150N10T
IXTF250N10T
IXTF180N10T
In conclusion, the IXTF200N10T power MOSFET offers high current handling, low on-state resistance, and robust construction, making it an ideal choice for various power management applications. Its wide operating temperature range and efficient thermal management further enhance its suitability for diverse electronic designs.
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What is the maximum drain-source voltage rating of IXTF200N10T?
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What is the on-state resistance of IXTF200N10T?
What type of package does IXTF200N10T come in?
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