MX29F040CTI-70G

Product Overview

Category

MX29F040CTI-70G belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data remains intact even when power is removed.
• High capacity: The MX29F040CTI-70G has a storage capacity of 4 megabits (512 kilobytes).
• Fast access time: It offers a fast access time of 70 nanoseconds.
• Low power consumption: This device operates at low power levels, making it suitable for battery-powered applications.

Package

The MX29F040CTI-70G is available in a surface mount package. It is commonly found in a 32-pin TSOP (Thin Small Outline Package) form factor.

Essence

The essence of MX29F040CTI-70G lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of MX29F040CTI-70G devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash EEPROM
• Capacity: 4 Megabits (512 Kilobytes)
• Access Time: 70 Nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The MX29F040CTI-70G features a 32-pin TSOP package with the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VSS (Ground)
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. VCC (Power)
19. DQ0
20. DQ1
21. DQ2
22. DQ3
23. DQ4
24. DQ5
25. DQ6
26. DQ7
27. WE# (Write Enable)
28. CE# (Chip Enable)
29. OE# (Output Enable)
30. RP# (Reset/Block Protect)
31. NC (No Connection)
32. WP# (Write Protect)

Functional Features

• Erase and Program Operations: The MX29F040CTI-70G supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Block Protection: It offers block protection features to prevent accidental modification or erasure of specific memory regions.
• High Reliability: This device is designed to provide reliable data storage with a high endurance rating and robust error correction capabilities.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• Fast access time allows for quick retrieval of stored information.
• Low power consumption makes it suitable for battery-powered devices.
• Block protection feature enhances data security.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Higher cost per bit compared to some alternative memory solutions.

Working Principles

The MX29F040CTI-70G utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, an electrical charge is applied to the memory cells, altering their state. This altered state represents the stored data. The data can be read by detecting the electrical state of the memory cells.

Detailed Application Field Plans

The MX29F040CTI-70G is widely used in various electronic systems and applications, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

• MX29F040CQI-70G: Similar specifications and features, but available in a different package (44-pin SOP).
• MX29F040CPQC-70G: Higher capacity variant (8 Megabits) with similar characteristics and pin configuration.
• MX29F040CBTI-70G: Lower power consumption variant with similar specifications and pin configuration.

These alternative models provide options for different application requirements while maintaining compatibility with the MX29F040CTI-70G.

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