JS28F256M29EWHD

Basic Information Overview

• Category: Flash Memory
• Use: Data storage in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: Integrated Circuit (IC)
• Essence: Stores digital information in a solid-state format
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Capacity: 256 megabits (32 megabytes)
• Organization: 4 banks of 64 megabits each
• Interface: Parallel
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycles: 100,000 minimum
• Data Retention: 20 years minimum

Detailed Pin Configuration

The JS28F256M29EWHD has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CE#
30. WE#
31. RE#
32. WP#
33. BYTE#
34. RY/BY#
35. DQ0
36. DQ1
37. DQ2
38. DQ3
39. DQ4
40. DQ5
41. DQ6
42. DQ7
43. VSS
44. NC
45. NC
46. NC
47. NC
48. VCC

Functional Features

• High-speed read and write operations enable quick access to stored data.
• Non-volatile memory retains information even when power is disconnected.
• Large storage capacity allows for the storage of significant amounts of data.
• Parallel interface facilitates easy integration into various electronic devices.

Advantages and Disadvantages

Advantages: - Fast read and write operations enhance overall system performance. - Non-volatile nature ensures data integrity during power interruptions. - Ample storage capacity accommodates diverse application requirements.

Disadvantages: - Limited erase/program cycles may restrict certain use cases. - Higher cost compared to other types of memory technologies. - Larger physical size compared to some alternative models.

Working Principles

The JS28F256M29EWHD utilizes a floating-gate transistor technology to store digital information. It employs a combination of electrical charges to represent binary data (0s and 1s). The presence or absence of charge on the floating gate determines the stored value. During read and write operations, voltages are applied to specific pins to manipulate the charge levels, allowing for data retrieval or modification.

Detailed Application Field Plans

The JS28F256M29EWHD finds applications in various electronic devices that require non-volatile storage capabilities. Some common application fields include: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Networking equipment

Detailed and Complete Alternative Models

• Model 1: XYZ Flash Memory - Similar specifications and functionality, available in different package options.
• Model 2: ABC Flash Memory - Lower cost alternative with slightly reduced storage capacity and performance.
• Model 3: PQR Flash Memory - Higher-end option with enhanced durability and extended temperature range.

Note: The above alternative models are provided for illustrative purposes and may not represent actual products in the market.

This entry provides an overview of the JS28F256M29EWHD flash memory, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.