JS28F256P30TFA

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: TFBGA (Thin Fine-Pitch Ball Grid Array)
• Essence: Advanced flash memory technology for reliable data storage
• Packaging/Quantity: Available in reels, quantity varies based on customer requirements

Specifications

• Memory Type: NOR Flash
• Density: 256 Megabits (32 Megabytes)
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Access Time: 30 ns
• Erase/Program Times:
  • Sector Erase: 10 ms (typical)
  • Byte Program: 200 µs (typical)
• Endurance: 100,000 erase/program cycles (minimum)
• Data Retention: 20 years (minimum)

Pin Configuration

The JS28F256P30TFA has a total of 56 pins arranged as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. BYTE#
35. WE#
36. RE#
37. CE#
38. WP#
39. RY/BY#
40. VSS

41-56: Not connected (NC)

Functional Features

• High-speed read and write operations for efficient data access
• Sector erase capability for flexible memory management
• Byte-level programming for precise data storage
• Built-in hardware and software protection mechanisms for data security
• Low power consumption for energy-efficient operation
• Wide operating temperature range for versatile applications

Advantages

• Large storage capacity enables storing a vast amount of data
• High-speed operations facilitate quick data retrieval and storage
• Reliable and durable flash memory technology ensures data integrity
• Flexible sector erase and byte-level programming allow efficient memory management
• Hardware and software protection mechanisms enhance data security
• Low power consumption prolongs battery life in portable devices

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Relatively higher cost per unit compared to some alternative memory options
• Requires careful handling and storage to prevent damage from electrostatic discharge

Working Principles

The JS28F256P30TFA utilizes NOR flash memory technology. It stores data by trapping electric charges within its floating gate transistors. When reading data, the memory controller applies appropriate voltages to the memory cells, allowing the charges to flow through the transistors and determine the stored information. During programming or erasing, high voltages are applied to modify the charge levels within the floating gates.

Application Field Plans

The JS28F256P30TFA is widely used in various electronic devices that require reliable and high-capacity data storage. Some of the application fields include:

1. Embedded Systems: Used in industrial control systems, automotive electronics, and medical devices for storing firmware, configuration data, and log files.
2. Consumer Electronics: Found in digital cameras, set-top boxes, and gaming consoles to store operating systems, user data, and multimedia content.
3. Networking Equipment: Utilized in routers, switches, and network appliances for storing firmware, routing tables, and configuration settings.
4. Communication Devices: Integrated into smartphones, tablets, and IoT devices for storing operating systems, applications, and user data.

Alternative Models

• JS28F256P30TFA is part of the JS28F256P series from a specific manufacturer. Alternative models within the same series may include JS28F256P33TFA, JS28F256P35TFA, and JS28F256P37TFA.
• Other manufacturers may offer similar flash memory products with different model numbers, such as ABC1234, XYZ5678, and MNO9876.

*Note: The alternative models mentioned above are provided for illustrative purposes and may not represent an