JS28F640J3F75G

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory technology for long-term data storage
• Packaging/Quantity: Available in various package types (e.g., BGA, TSOP) with different quantities per package

Specifications

• Capacity: 64 Megabits (8 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Access Time: 70 ns
• Erase/Program Cycles: 100,000 cycles
• Data Retention: Up to 20 years

Detailed Pin Configuration

The JS28F640J3F75G flash memory IC has a pin configuration as follows:

1. VCC (Power Supply)
2. A0-A18 (Address Inputs)
3. DQ0-DQ15 (Data Inputs/Outputs)
4. WE# (Write Enable)
5. CE# (Chip Enable)
6. OE# (Output Enable)
7. RP#/BYTE# (Ready/Busy or Byte Enable)
8. RESET# (Reset Input)
9. WP#/ACC (Write Protect/Accumulator)
10. VSS (Ground)

Functional Features

• High-Speed Operation: Enables fast data access and transfer.
• Non-Volatile Storage: Retains data even when power is disconnected.
• Reliable Performance: Designed for high endurance and data retention.
• Flexible Interface: Supports parallel communication with the host device.
• Error Correction Code (ECC): Enhances data integrity and reliability.
• Block Erase/Program: Allows selective modification of memory blocks.

Advantages and Disadvantages

Advantages: - High storage capacity - Fast read/write speeds - Long data retention period - Reliable performance - Flexible interface options

Disadvantages: - Limited erase/program cycles - Higher power consumption compared to some other memory technologies

Working Principles

The JS28F640J3F75G flash memory operates based on the principles of floating-gate transistors. It uses a combination of electrical charges trapped in the floating gate to store binary data. The presence or absence of charge determines the logic state of each memory cell, allowing for data storage and retrieval.

During programming, an electric field is applied to the floating gate, which traps or releases electrons, altering the threshold voltage of the transistor. This change in threshold voltage represents the stored data. Reading involves applying appropriate voltages to the memory cells and sensing the resulting current flow to determine the logic state.

Detailed Application Field Plans

The JS28F640J3F75G flash memory finds applications in various electronic devices, including but not limited to:

1. Solid-State Drives (SSDs)
2. Digital Cameras
3. Mobile Phones
4. Tablets
5. Embedded Systems
6. Automotive Electronics
7. Industrial Control Systems

Its high capacity, fast operation, and non-volatile nature make it suitable for storing firmware, operating systems, application code, and user data in these devices.

Alternative Models

Here are some alternative models that offer similar functionality to the JS28F640J3F75G flash memory:

1. Micron MT29F64G08CBABA
2. Samsung K9F5608U0D
3. Toshiba TC58NVG0S3ETA00
4. Intel 28F640J3D75
5. Spansion S29GL064N90TFI04

These alternatives provide comparable specifications and can be considered as substitutes based on specific requirements and availability.

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