Micron Technology Inc.
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M28W160CB70N6F TR
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M28W160CB70N6F TR

Product Overview

  • Category: Memory chip
  • Use: Data storage in electronic devices
  • Characteristics: Non-volatile, high capacity, fast read/write speeds
  • Package: Surface mount technology (SMT)
  • Essence: Stores and retrieves digital information

Specifications

  • Capacity: 16 megabits (2 megabytes)
  • Organization: 2,097,152 words x 8 bits
  • Supply voltage: 2.7V to 3.6V
  • Operating temperature: -40°C to +85°C
  • Interface: Parallel
  • Access time: 70 ns
  • Erase/Program cycles: 100,000 cycles

Pin Configuration

The M28W160CB70N6F TR has a total of 48 pins. The pin configuration is as follows:

  1. A0
  2. A1
  3. A2
  4. A3
  5. A4
  6. A5
  7. A6
  8. A7
  9. A8
  10. A9
  11. A10
  12. A11
  13. A12
  14. A13
  15. A14
  16. A15
  17. A16
  18. A17
  19. A18
  20. A19
  21. A20
  22. A21
  23. A22
  24. A23
  25. A24
  26. A25
  27. ALE
  28. CE#
  29. WE#
  30. OE#
  31. BYTE#
  32. VCC
  33. DQ0
  34. DQ1
  35. DQ2
  36. DQ3
  37. DQ4
  38. DQ5
  39. DQ6
  40. DQ7
  41. VSS
  42. RP#
  43. RE#
  44. WP#
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • Non-volatile memory: Retains data even when power is removed
  • High-speed operation: Allows for fast read and write operations
  • Low power consumption: Efficient use of energy
  • Easy integration: Compatible with standard parallel interfaces
  • Reliable storage: Endurance of 100,000 erase/program cycles

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access times - Low power consumption - Compatibility with existing systems

Disadvantages: - Limited erase/program cycles - Higher cost compared to other memory technologies

Working Principles

The M28W160CB70N6F TR is based on flash memory technology. It utilizes floating gate transistors to store and retrieve digital information. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. This allows for non-volatile storage of data. The stored information can be accessed by applying appropriate voltages to the memory cells.

Application Field Plans

The M28W160CB70N6F TR is commonly used in various electronic devices that require non-volatile data storage. Some application fields include:

  1. Consumer electronics: Smartphones, tablets, digital cameras
  2. Automotive: Infotainment systems, navigation systems
  3. Industrial: Control systems, data loggers
  4. Communication: Routers, switches, modems

Alternative Models

  1. M28W160CT70N6F TR
  2. M28W160CB70N6T TR
  3. M28W160CB70N6F T

These alternative models offer similar specifications and functionality to the M28W160CB70N6F TR.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi M28W160CB70N6F TR dalam penyelesaian teknikal

Sure! Here are 10 common questions and answers related to the application of M28W160CB70N6F TR in technical solutions:

  1. Q: What is the capacity of the M28W160CB70N6F TR flash memory? A: The M28W160CB70N6F TR has a capacity of 16 megabits (2 megabytes).

  2. Q: What is the operating voltage range for this flash memory? A: The operating voltage range for the M28W160CB70N6F TR is typically between 2.7V and 3.6V.

  3. Q: Can I use this flash memory in industrial applications? A: Yes, the M28W160CB70N6F TR is suitable for industrial applications due to its wide operating temperature range and reliability.

  4. Q: What is the maximum clock frequency supported by this flash memory? A: The M28W160CB70N6F TR supports a maximum clock frequency of 70 MHz.

  5. Q: Is this flash memory compatible with SPI interface? A: Yes, the M28W160CB70N6F TR supports the Serial Peripheral Interface (SPI) for easy integration into various systems.

  6. Q: Does this flash memory support hardware write protection? A: Yes, the M28W160CB70N6F TR provides hardware write protection features to prevent accidental data modification.

  7. Q: Can I perform in-system programming on this flash memory? A: Yes, the M28W160CB70N6F TR supports in-system programming (ISP) which allows you to update the firmware without removing the chip.

  8. Q: What is the typical access time for reading data from this flash memory? A: The typical access time for reading data from the M28W160CB70N6F TR is around 90 nanoseconds.

  9. Q: Does this flash memory have any built-in error correction mechanisms? A: Yes, the M28W160CB70N6F TR incorporates Error Correction Code (ECC) to enhance data integrity and reliability.

  10. Q: Can I use this flash memory in automotive applications? A: Yes, the M28W160CB70N6F TR is designed to meet the stringent requirements of automotive applications, including extended temperature ranges and high reliability standards.

Please note that these answers are general and may vary depending on the specific implementation and usage scenario. It's always recommended to refer to the datasheet or consult with the manufacturer for detailed information.