M29F200FT55M3F2 TR

Product Overview

Category

The M29F200FT55M3F2 TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The M29F200FT55M3F2 TR retains stored data even when power is removed.
• High capacity: It has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: The device offers quick read and write operations.
• Low power consumption: It operates efficiently, consuming minimal power.
• Reliable: The M29F200FT55M3F2 TR ensures data integrity and durability.

Package

The M29F200FT55M3F2 TR is available in a compact surface-mount package.

Essence

This memory device is essential for storing critical data in various electronic applications.

Packaging/Quantity

The M29F200FT55M3F2 TR is typically packaged in reels or trays, with a quantity of several hundred units per package.

Specifications

• Memory Type: Flash
• Capacity: 2 Megabits (256 Kilobytes)
• Supply Voltage: 2.7V - 3.6V
• Access Time: 55 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The M29F200FT55M3F2 TR features a parallel interface with the following pin configuration:

1. VCC: Power supply voltage
2. A0-A16: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#: Ready/Busy status
8. RESET#: Reset control
9. WP#: Write protect control
10. VSS: Ground

Functional Features

• Fast Read and Write Operations: The M29F200FT55M3F2 TR offers high-speed data access, enabling efficient read and write operations.
• Sector Erase Capability: This memory device supports sector erase functionality, allowing specific sections of the memory to be erased for rewriting.
• Data Protection: The M29F200FT55M3F2 TR incorporates various mechanisms to ensure data integrity and prevent accidental modifications.
• Low Power Consumption: It operates with low power requirements, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Non-volatile memory
• Reliable and durable
• Low power consumption

Disadvantages

• Limited write endurance
• Higher cost compared to other memory technologies

Working Principles

The M29F200FT55M3F2 TR utilizes flash memory technology, which stores data in floating-gate transistors. When data is written, an electrical charge is applied to the floating gate, altering its conductivity and storing the desired information. During read operations, the stored charge is measured to retrieve the stored data.

Detailed Application Field Plans

The M29F200FT55M3F2 TR finds applications in various electronic systems, including: 1. Embedded Systems: Used for firmware storage in microcontrollers and other embedded devices. 2. Consumer Electronics: Found in digital cameras, set-top boxes, and portable media players for data storage. 3. Automotive Electronics: Utilized in automotive infotainment systems, instrument clusters, and engine control units. 4. Industrial Control Systems: Employed in programmable logic controllers (PLCs) and automation equipment for data storage.

Detailed and Complete Alternative Models

1. M29F200FB5AN6E: Similar flash memory device with a different package and access time.
2. M29F200BB70N6E: Flash memory chip offering the same capacity but with a slower access time.
3. M29F200FT70M3F2: Another variant of the M29F200 series with a higher access time.

(Note: This is not an exhaustive list, and there may be other alternative models available in the market.)

In conclusion, the M29F200FT55M3F2 TR is a non-volatile memory device with a high storage capacity, fast access time, and low power consumption. It finds applications in various electronic systems and offers reliable data storage capabilities. However, it has limited write endurance and may have a higher cost compared to alternative memory technologies.