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M29W128GSH70ZA6F TR

M29W128GSH70ZA6F TR

Product Overview

  • Category: Flash Memory
  • Use: Data storage and retrieval in electronic devices
  • Characteristics: High capacity, non-volatile, fast read/write speeds
  • Package: Surface Mount Technology (SMT)
  • Essence: Non-volatile memory for storing digital data
  • Packaging/Quantity: Tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Type: NOR Flash
  • Capacity: 128 gigabits (16 gigabytes)
  • Voltage Range: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Interface: Parallel
  • Access Time: 70 nanoseconds
  • Package Type: 48-ball Fine-pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The M29W128GSH70ZA6F TR has a 48-ball FBGA package with the following pin configuration:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. DQ0
  27. DQ1
  28. DQ2
  29. DQ3
  30. DQ4
  31. DQ5
  32. DQ6
  33. DQ7
  34. WE#
  35. CE#
  36. RE#
  37. WP#
  38. BYTE#
  39. RY/BY#
  40. VSS
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. VCC

Functional Features

  • High-speed read and write operations
  • Sector erase capability for efficient data management
  • Built-in error correction mechanism
  • Low power consumption
  • Wide operating temperature range for versatile applications

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access times - Non-volatile memory retains data even without power - Reliable and durable - Suitable for various electronic devices

Disadvantages: - Higher cost compared to other types of memory - Limited endurance (number of erase/write cycles) - Requires additional circuitry for interfacing with the host device

Working Principles

The M29W128GSH70ZA6F TR is based on NOR Flash memory technology. It utilizes a grid of memory cells, each capable of storing a single bit of information. The memory cells are organized into sectors, allowing for efficient erasure and rewriting of data. When data is written, an electrical charge is applied to the appropriate memory cells, altering their state. During read operations, the stored charges are detected and converted back into digital data.

Detailed Application Field Plans

The M29W128GSH70ZA6F TR is widely used in various electronic devices that require high-capacity non-volatile memory. Some common application fields include:

  1. Solid-state drives (SSDs)
  2. Embedded systems
  3. Automotive electronics
  4. Industrial control systems
  5. Consumer electronics (e.g., smartphones, tablets)

Detailed and Complete Alternative Models

  1. M29W128GSH70ZB6F TR
  2. M29W128GSH70ZC6F TR
  3. M29W128GSH70ZD6F TR
  4. M29W128GSH70ZE6F TR

These alternative models offer similar specifications and functionality, providing customers with options based on their specific requirements.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi M29W128GSH70ZA6F TR dalam penyelesaian teknikal

Sure! Here are 10 common questions and answers related to the application of M29W128GSH70ZA6F TR in technical solutions:

  1. Q: What is the capacity of the M29W128GSH70ZA6F TR flash memory? A: The M29W128GSH70ZA6F TR has a capacity of 128 gigabits (16 gigabytes).

  2. Q: What is the operating voltage range for this flash memory? A: The operating voltage range for the M29W128GSH70ZA6F TR is typically between 2.7V and 3.6V.

  3. Q: What is the maximum clock frequency supported by this flash memory? A: The M29W128GSH70ZA6F TR supports a maximum clock frequency of 70 MHz.

  4. Q: Can this flash memory be used in automotive applications? A: Yes, the M29W128GSH70ZA6F TR is designed to meet automotive-grade requirements and can be used in automotive applications.

  5. Q: Does this flash memory support hardware data protection features? A: Yes, the M29W128GSH70ZA6F TR supports hardware data protection features like block lock and password protection.

  6. Q: What is the typical endurance rating of this flash memory? A: The M29W128GSH70ZA6F TR has a typical endurance rating of 100,000 program/erase cycles per sector.

  7. Q: Is this flash memory compatible with standard SPI interfaces? A: Yes, the M29W128GSH70ZA6F TR is compatible with standard Serial Peripheral Interface (SPI) protocols.

  8. Q: Can this flash memory operate at extended temperature ranges? A: Yes, the M29W128GSH70ZA6F TR is designed to operate at extended temperature ranges from -40°C to +85°C.

  9. Q: Does this flash memory support software and hardware reset functions? A: Yes, the M29W128GSH70ZA6F TR supports both software and hardware reset functions for easy system integration.

  10. Q: What is the package type of the M29W128GSH70ZA6F TR flash memory? A: The M29W128GSH70ZA6F TR is available in a 48-ball TFBGA (Thin Fine-Pitch Ball Grid Array) package.

Please note that these answers are based on general information about the M29W128GSH70ZA6F TR flash memory and may vary depending on specific application requirements.