M29W256GSH70ZS6F TR

Product Overview

• Category: Memory chip
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, fast read/write speeds, low power consumption
• Package: Surface mount technology (SMT) package
• Essence: Non-volatile memory for long-term data storage
• Packaging/Quantity: Available in reels with a specified quantity per reel

Specifications

• Model: M29W256GSH70ZS6F TR
• Capacity: 256 gigabits (32 gigabytes)
• Operating Voltage: 2.7V - 3.6V
• Interface: Parallel NOR Flash
• Speed: 70 nanoseconds (ns) access time
• Temperature Range: -40°C to +85°C
• Package Type: 48-ball BGA (Ball Grid Array)

Detailed Pin Configuration

The M29W256GSH70ZS6F TR chip has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Reset/byte select control
9. RY/BY#: Ready/busy status output
10. WP#/ACC: Write protect or accelerated programming control
11. NC: No connection

Functional Features

• High-speed data transfer with a fast access time of 70 ns
• Low power consumption for efficient operation
• Reliable non-volatile memory for long-term data storage
• Wide temperature range for versatile usage scenarios
• Surface mount technology (SMT) package for easy integration into electronic devices

Advantages and Disadvantages

Advantages: - Large storage capacity of 256 gigabits - Fast read/write speeds for quick data access - Low power consumption for energy-efficient operation - Wide temperature range allows usage in various environments

Disadvantages: - Limited compatibility with certain device interfaces - Relatively high cost compared to lower-capacity memory chips

Working Principles

The M29W256GSH70ZS6F TR chip is based on parallel NOR Flash technology. It utilizes a grid of memory cells, where each cell stores a bit of information as an electrical charge. The chip's control pins enable reading, writing, and erasing of data stored in these memory cells. When powered on, the chip allows data to be read or written by sending appropriate signals through its interface.

Detailed Application Field Plans

The M29W256GSH70ZS6F TR chip finds applications in various electronic devices that require high-capacity, non-volatile memory. Some potential application fields include:

1. Solid-state drives (SSDs)
2. Embedded systems
3. Automotive electronics
4. Industrial control systems
5. Networking equipment

Detailed and Complete Alternative Models

1. M29W128GSH70ZS6F TR: 128 gigabit capacity, same specifications as M29W256GSH70ZS6F TR
2. M29W512GSH70ZS6F TR: 512 gigabit capacity, same specifications as M29W256GSH70ZS6F TR
3. M29W1T08GSH70ZS6F TR: 1 terabit capacity, same specifications as M29W256GSH70ZS6F TR

These alternative models offer different storage capacities while maintaining the same specifications as the M29W256GSH70ZS6F TR chip.

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